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2SA1013 Datasheet Preview

2SA1013 Datasheet

PNP Transistor

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2SA1013 pdf
RoHS
2SA1013
2SA1013 TRANSISTOR (PNP)
DFEATURE
Power dissipation
TPCM : 0.9 W (Tamb=25)
.,LCollector current
ICM: -1A
Collector-base voltage
OV(BR)CBO : -160 V
Operating and storage junction temperature range
CTJ, Tstg: -55to +150
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
ICELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
NParameter
Collector-base breakdown voltage
OCollector-emitter breakdown voltage
REmitter-base breakdown voltage
TCollector cut-off current
CCollector cut-off current
EEmitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Test conditions
Ic= -100µA , IE=0
IC= -1 mA , IB=0
IE= -10 Μa, IC=0
VCB= -150 V, IE=0
VCE= -120 V, IB=0
VEB= -6V, IC=0
MIN
-160
-160
-6
ELDC current gain
hFE(1)
hFE(2)
VCE=-5 V, IC= -200mA
VCE=-5V, IC= -50mA
65
40
JCollector-emitter saturation voltage
Base-emitter voltage
WETransition frequency
VCE(sat)
VBE
fT
IC= -500 mA, IB= -50 mA
IC= -5 mA, VCE= -5V
VCE= -5 V, IC= -200mA
15
MAX
-1
-10
-1
310
-1.5
-0.75
UNIT
V
V
V
µA
µA
µA
V
V
MHz
f = 30MHz
CLASSIFICATION OF hFE(1)
Rank
RO Y
Range
60-120
120-200
200-300
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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Part Number 2SA1013
Description PNP Transistor
Maker WEJ
Total Page 1 Pages
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