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2SC4548 Datasheet Preview

2SC4548 Datasheet

NPN EPITAXIAL PLANAR TRANSISTOR

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2SC4548 pdf
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
2SC4548
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otherwise Noted)
Rating
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Total Device Disspation TA=25°C
Junction Temperature
PD
Tj
Value
400
400
5
200
500
+150
Storage Temperature
Tstg -55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
WEITRON
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03-Jun-10



WEITRON
WEITRON

2SC4548 Datasheet Preview

2SC4548 Datasheet

NPN EPITAXIAL PLANAR TRANSISTOR

No Preview Available !

2SC4548 pdf
2SC4548
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
Collector Cut-O Current
VCB=300V, IE =0
Emitter-Cut-O Current
VEB=4V, IC=0
ON CHARACTERISTICS
DC Current Gain
VCE=10V, IC =50mA
Collector-Emitter Saturation Voltage
IC=50mA, IB=5mA
Base-Emitter Saturation Voltage
IC=50mA, IB=5mA
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=30V, IC=10mA
Output Capacitance
VCB=30V, IE =0, f=1MHz
Turn-ON Time
VCC=150V, IC=50mA, IB1=-IB2=5mA
Turn-OFF Time
VCC=150V, IC=50mA, IB1=-IB2=5mA
CLASSIFICATION OF hFE
Rank
Range
Marking
D
60-120
Symbol
BVCBO
Min
400
BVCEO
BVEBO
400
5.0
ICBO -
IEBO -
Typ
-
-
-
-
-
Max
-
-
-
0.1
0.1
Unit
V
V
V
µA
µA
hFE
VCE(sat)
VBE(sat)
60
-
-
- 200 -
- 0.6 V
- 1.0 V
fT -
Cob -
70 - MHz
4.0 - pF
ton - 0.25 - µS
to - 5.0 - µS
E
100-200
CN
WEITRON
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2/3
03-Jun-10


Part Number 2SC4548
Description NPN EPITAXIAL PLANAR TRANSISTOR
Maker WEITRON
Total Page 3 Pages
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