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Vishay Intertechnology Electronic Components Datasheet

S852T Datasheet

Silicon NPN Planar RF Transistor

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S852T pdf
Silicon NPN Planar RF Transistor
S852T/S852TW
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
D Low supply voltage
D Low current consumption
WD 50 input impedance at 945 MHz
D Low noise figure
D High power gain
11
94 9280
23
S852T Marking: 852
13 581
1 = Collector, 2 = Base, 3 = Emitter
13 652
23
S852TW Marking: W52
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
13 570
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 125 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
12
6
2
8
30
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
mplated with 35 m Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85052
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (7)


Vishay Intertechnology Electronic Components Datasheet

S852T Datasheet

Silicon NPN Planar RF Transistor

No Preview Available !

S852T pdf
S852T/S852TW
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 12 V, VBE = 0
Collector-base cut-off current
VCB = 8 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA
DC forward current transfer ratio VCE = 3 V, IC = 1 mA
Symbol Min Typ Max Unit
mICES
100 A
ICBO
IEBO
100 nA
1 mA
V(BR)CEO 6
V
VCEsat
0.1 0.4 V
hFE 40 90 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Noise figure
Power gain
Collector current for fT max
Real part of input
impedance
Test Conditions
VCE = 3 V, IC = 1 mA, f = 500 MHz
VCE = 2 V, IC = 1.5 mA, f = 500 MHz
VCB = 1 V, f = 1 MHz
ZS = ZSopt, f = 450 MHz, VCE = 2 V,
IC = 0.5 mA
ZS = ZSopt, f = 945 MHz, VCE = 3 V,
IC = 1 mA
ZS = ZSopt, f = 945 MHz, VCE = 2 V,
IC = 1.5 mA
VCE = 2 V, IC = 0.5 mA, f = 450MHz
VCE = 3 V, IC = 1 mA, f = 945 MHz
VCE = 2 V, IC = 1.5 mA, f = 945 MHz
VCE = 2 V, f = 500 MHz
VCE = 3 V, IC = 1 mA, f = 945 MHz
VCE = 2 V, IC = 1.5 mA, f = 945 MHz
Symbol
fT
fT
Ccb
Fopt
Min Typ Max Unit
4.7 GHz
5.2 GHz
0.25 pF
1.1 dB
Fopt 1.8 dB
Fopt 2 dB
Gpe @Fopt
Gpe @Fopt
Gpe @Fopt
IC
Re(h11e)
Re(h11e)
11.5
10.5
12
3
50
50
dB
dB
dB
mA
W
W
www.vishay.de FaxBack +1-408-970-5600
2 (7)
Document Number 85052
Rev. 3, 20-Jan-99


Part Number S852T
Description Silicon NPN Planar RF Transistor
Maker Vishay Telefunken
Total Page 7 Pages
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