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Vishay Intertechnology Electronic Components Datasheet

S852 Datasheet

Silicon NPN Planar RF Transistor

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S852 pdf
Silicon NPN Planar RF Transistor
S852T/S852TW
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
D Low supply voltage
D Low current consumption
WD 50 input impedance at 945 MHz
D Low noise figure
D High power gain
11
94 9280
23
S852T Marking: 852
13 581
1 = Collector, 2 = Base, 3 = Emitter
13 652
23
S852TW Marking: W52
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
13 570
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 125 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
12
6
2
8
30
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
mplated with 35 m Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85052
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (7)



Vishay Intertechnology Electronic Components Datasheet

S852 Datasheet

Silicon NPN Planar RF Transistor

No Preview Available !

S852 pdf
S852T/S852TW
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 12 V, VBE = 0
Collector-base cut-off current
VCB = 8 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA
DC forward current transfer ratio VCE = 3 V, IC = 1 mA
Symbol Min Typ Max Unit
mICES
100 A
ICBO
IEBO
100 nA
1 mA
V(BR)CEO 6
V
VCEsat
0.1 0.4 V
hFE 40 90 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Noise figure
Power gain
Collector current for fT max
Real part of input
impedance
Test Conditions
VCE = 3 V, IC = 1 mA, f = 500 MHz
VCE = 2 V, IC = 1.5 mA, f = 500 MHz
VCB = 1 V, f = 1 MHz
ZS = ZSopt, f = 450 MHz, VCE = 2 V,
IC = 0.5 mA
ZS = ZSopt, f = 945 MHz, VCE = 3 V,
IC = 1 mA
ZS = ZSopt, f = 945 MHz, VCE = 2 V,
IC = 1.5 mA
VCE = 2 V, IC = 0.5 mA, f = 450MHz
VCE = 3 V, IC = 1 mA, f = 945 MHz
VCE = 2 V, IC = 1.5 mA, f = 945 MHz
VCE = 2 V, f = 500 MHz
VCE = 3 V, IC = 1 mA, f = 945 MHz
VCE = 2 V, IC = 1.5 mA, f = 945 MHz
Symbol
fT
fT
Ccb
Fopt
Min Typ Max Unit
4.7 GHz
5.2 GHz
0.25 pF
1.1 dB
Fopt 1.8 dB
Fopt 2 dB
Gpe @Fopt
Gpe @Fopt
Gpe @Fopt
IC
Re(h11e)
Re(h11e)
11.5
10.5
12
3
50
50
dB
dB
dB
mA
W
W
www.vishay.de FaxBack +1-408-970-5600
2 (7)
Document Number 85052
Rev. 3, 20-Jan-99



Vishay Intertechnology Electronic Components Datasheet

S852 Datasheet

Silicon NPN Planar RF Transistor

No Preview Available !

S852 pdf
S852T/S852TW
Vishay Telefunken
Common Emitter S–Parameters
Z0 = 50 W, Tamb = 25_C, unless otherwise specified
VCE/V IC/mA
0.5
2
1.5
f/MHz
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
S11
LIN
MAG
ANG
deg
9.976 –3.8
0.969 –7.9
0.955 –11.7
0.939 –15.5
0.920 –18.9
0.901 –22.4
0.881 –25.8
0.861 –28.9
0.838 –32.3
0.818 –35.4
0.793 –38.8
0.772 –41.5
0.746 –45.1
0.972 –7.5
0.898 –14.5
0.858 –21.0
0.811 –27.0
0.762 –32.2
0.710 –36.8
0.662 –40.3
0.617 –43.8
0.576 –46.9
0.540 –50.0
0.502 –52.4
0.470 –54.8
0.439 –57.6
S21
LIN
MAG
ANG
deg
1.71 174.9
1.71 168.9
1.70 163.3
1.68 157.7
1.64 151.9
1.62 147.2
1.58 142.2
1.56 137.6
1.53 133.1
1.50 129.4
1.49 125.1
1.46 121.3
1.44 117.2
4.84 170.9
4.69 161.7
4.49 153.1
4.27 145.1
4.01 137.8
3.77 131.3
3.55 125.3
3.33 120.0
3.15 115.1
2.98 110.7
2.82 106.5
2.69 102.8
2.56 99.0
S12
LIN
MAG
ANG
deg
0.015 86.8
0.029 83.4
0.044 80.0
0.058 76.8
0.070 73.6
0.082 71.5
0.093 69.0
0.104 66.7
0.114 65.0
0.121 63.5
0.130 61.8
0.138 60.4
0.148 58.6
0.016 84.8
0.031 79.8
0.045 75.1
0.057 71.5
0.067 68.3
0.077 65.9
0.085 63.6
0.093 62.1
0.099 61.2
0.106 60.3
0.113 59.5
0.118 59.3
0.123 58.7
S22
LIN
MAG
ANG
deg
0.998 –2.3
0.993 –4.7
0.984 –6.7
0.974 –8.7
0.959 –10.6
0.948 –12.4
0.935 –13.9
0.922 –15.5
0.909 –17.2
0.898 –18.6
0.884 –19.7
0.873 –21.3
0.859 –22.6
0.990 –3.9
0.972 –7.4
0.944 –10.6
0.913 –13.1
0.880 –15.3
0.849 –16.8
0.820 –17.8
0.796 –18.7
0.775 –19.5
0.756 –20.3
0.740 –20.8
0.724 –21.4
0.710 –21.7
Document Number 85052
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
3 (7)




Part Number S852
Description Silicon NPN Planar RF Transistor
Maker Vishay Telefunken
Total Page 7 Pages
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