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Vishay Intertechnology Electronic Components Datasheet

S525 Datasheet

N-Channel MOS-Fieldeffect Triode/ Depletion Mode

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S525 pdf
S525T
Vishay Telefunken
N–Channel MOS-Fieldeffect Triode, Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
High frequency stages up to 300 MHz.
Features
D Integrated gate protection diodes
D Low feedback capacitance
D Low noise figure
1
D
G
94 9280
23
S525T Marking: LB
Plastic case (SOT 23)
1=Source, 2=Gate , 3=Drain
13 581
12624
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate-source peak current
Total power dissipation
Channel temperature
Tamb 60 °C
Storage temperature range
Type
Symbol
VDS
ID
±IGSM
Ptot
TCh
Tstg
Value
20
30
10
200
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthChA
Value
450
Unit
K/W
Document Number 85045
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (7)


Vishay Intertechnology Electronic Components Datasheet

S525 Datasheet

N-Channel MOS-Fieldeffect Triode/ Depletion Mode

No Preview Available !

S525 pdf
S525T
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source breakdown voltage
Gate - source breakdown voltage
Gate - source leakage current
Drain current
Gate - source cut-off voltage
ID = 10 mA, –VGS = 4 V
±IGS = 10 mA, VDS = 0
±VGS = 6 V, VDS = 0
VDS = 10 V, VGS = 0
VDS = 10 V, ID = 20 mA
Symbol Min Typ Max Unit
V(BR)DS
±V(BR)GSS
±IGSS
IDSS
–VGS(OFF)
20
7.5
5
V
12 V
50 nA
14 mA
2.5 V
Electrical AC Characteristics
VDS = 10 V, ID = 10 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate input capacitance
Feedback capacitance
Output capacitance
Noise figure
Power gain
Test Conditions
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
Symbol Min Typ Max Unit
y21s
Cissg1
Crss
Coss
F
14 16
2.7
25
1.0
1.0
mS
pF
fF
pF
dB
Gps 25 dB
www.vishay.de FaxBack +1-408-970-5600
2 (7)
Document Number 85045
Rev. 3, 20-Jan-99


Part Number S525
Description N-Channel MOS-Fieldeffect Triode/ Depletion Mode
Maker Vishay Telefunken
Total Page 7 Pages
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S525 pdf
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