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Vishay Intertechnology Electronic Components Datasheet

S350P Datasheet

Silicon NPN Phototransistor

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S350P pdf
Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat win-
dow.
With a lead center–to–center spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with lp > 850nm.
Features
D High radiant sensitivity
D Miniature T–¾ flat plastic package with IR filter
D Very wide angle of half sensitivity ϕ = ± 40°
D Suitable for near infrared radiation
D Suitable for 0.1” (2.54 mm) center–to–center
spacing
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp/T = 0.5, tp 10 ms
xTamb 55 °C
xt 3 s
S350P
Vishay Telefunken
94 8640
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81543
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)


Vishay Intertechnology Electronic Components Datasheet

S350P Datasheet

Silicon NPN Phototransistor

No Preview Available !

S350P pdf
S350P
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Emitter Breakdown IC = 1 mA
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Angle of Half Sensitivity
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E=0
Ee = 1 mW/cm2,
l = 950 nm, VCE = 5 V
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Ee = 1 mW/cm2,
l = 950 nm, IC = 0.1 mA
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
WVS = 5 V, IC = 5 mA,
RL = 100
Symbol
V(BR)CE
O
ICEO
CCEO
Ica
Min
32
0.2
Typ Max
2 200
6
1
ϕ
lp
l0.5
VCEsat
±40
925
860...990
0.3
ton 6
toff 5
fc 110
Unit
V
nA
pF
mA
deg
nm
nm
V
ms
ms
kHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125 104
100
103
75 VCE=20V
RthJA
102
50
101
25
0
0
94 8308
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
100
20
94 8260
40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81543
Rev. 2, 20-May-99


Part Number S350P
Description Silicon NPN Phototransistor
Maker Vishay Telefunken
Total Page 5 Pages
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