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Vishay Intertechnology Electronic Components Datasheet

S186P Datasheet

Silicon PIN Photodiode

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S186P pdf
Silicon PIN Photodiode
Description
S186P is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package. The epoxy
package itself is an IR filter, spectrally matched to
yGaAs or GaAs on GaAlAs IR emitters (l p 900 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle
Features
D Fast response times
D Small junction capacitance
D High radiant sensitivity
D Large radiant sensitive area A=7.5 mm2
D Wide angle of half sensitivity ϕ = ± 65°
D Plastic case with IR filter (950 mm)
D Suitable for near infrared radiation
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xTamb 25 °C
xt 5 s
S186P
Vishay Telefunken
94 8490
Symbol
VR
PV
Tj
Tstg
Tsd
RthJA
Value
60
215
100
–55...+100
260
350
Unit
V
mW
°C
°C
°C
K/W
Document Number 81536
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)


Vishay Intertechnology Electronic Components Datasheet

S186P Datasheet

Silicon PIN Photodiode

No Preview Available !

S186P pdf
S186P
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Test Conditions
mIR = 100 A, E = 0
Symbol Min
V(BR) 60
Typ Max Unit
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2 30 nA
Diode Capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
70
pF
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
VR = 3 V, f = 1 MHz, E = 0
CD
25 40 pF
lEe = 1 mW/cm2, = 950 nm Vo
350 mV
l mEe = 1 mW/cm2, = 950 nm
Ik
38
A
mEe = 1 mW/cm2,
Ira 43
45
A
l = 950 nm, VR = 5 V
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
lVR = 20 V, = 950 nm
WVR = 10 V, RL = 1 k ,
l = 820 nm
WVR = 10 V, RL = 1 k ,
l = 820 nm
ϕ
ll0p.5
NEP
tr
tf
±65
950
870...1050
4x10–14
100
100
deg
nm
nm
W/Hz
ns
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20
94 8403
VR=10V
40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
l1.2 VR=5V
=950nm
1.0
0.8
0.6
0
94 8409
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81536
Rev. 2, 20-May-99


Part Number S186P
Description Silicon PIN Photodiode
Maker Vishay Telefunken
Total Page 5 Pages
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