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Vishay Intertechnology Electronic Components Datasheet

S153 Datasheet

Silicon PIN Photodiode

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S153 pdf
Silicon PIN Photodiode
S153P
Vishay Telefunken
Description
S153P is a high speed and high sensitive PIN photo-
diode in a hermetically sealed short TO–5 package.
Due to its flat, waterclear glass window the device is
sensitive to visible and near infrared radiation.
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
D High photo sensitivity
D Large radiant sensitive area A=7.5 mm2
D Fast response times
D Small junction capacitance
D For photodiode and photovoltaic operation
D Hermetically sealed case
D Wide angle of half sensitivity ϕ = ± 55°
D Suitable for visible and near infrared radiation
D Suitable to couple with glass fiber
94 8482
Applications
Applications requiring high speed and high sensitive PIN photodiodes in hermetically sealed packages.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xTamb 50 °C
xt 5 s
Symbol
VR
PV
Tj
Tamb
Tsd
RthJA
Value
50
300
125
–55...+125
260
250
Unit
V
mW
°C
°C
°C
K/W
Document Number 81535
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)



Vishay Intertechnology Electronic Components Datasheet

S153 Datasheet

Silicon PIN Photodiode

No Preview Available !

S153 pdf
S153P
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Test Conditions
mIR = 100 A, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
EA = 1 klx
EA = 1 klx
EA = 1 klx
lEe = 1 mW/cm2,
= 950 nm
Temp. Coefficient of Ik
Reverse Light Current
Absolute Spectral Sensitivity
Angle of Half Sensitivity
EA = 1 klx
EA = 1 klx, VR = 5 V
Ee = 1 mW/cm2,
l = 950 nm, VR = 5 V
lVR = 5 V, = 900 nm
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
lVR = 10 V, = 950 nm
WVR = 10 V, RL = 1 k ,
l = 820 nm
WVR = 10 V, RL = 1 k ,
l = 820 nm
Symbol
V(BR)
Iro
CD
CD
Vo
TKVo
Ik
Ik
Min
50
Typ Max Unit
V
2 30 nA
75 pF
25 40 pF
350 mV
–2.6 mV/K
80 mA
47 mA
TKIk
Ira
Ira
s(l)
ϕ
ll0p.5
NEP
tr
0.18
85
40 50
0.6
±55
900
600...1050
4.2x10–14
100
%/K
mA
mA
A/W
deg
nm
nm
W/Hz
ns
tf 100 ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
105 1.5
1.4
104
l1.3 VR=5V
=950nm
103 1.2
102
VR=10V
101
100
20 40 60 80 100 120
94 8463
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.1
1.0
0.9
0.8
0 20 40 60 80 100 120
94 8464
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81535
Rev. 2, 20-May-99



Vishay Intertechnology Electronic Components Datasheet

S153 Datasheet

Silicon PIN Photodiode

No Preview Available !

S153 pdf
1000
100
10
1 VR=5V
l=950nm
0.1
0.01
94 8465
0.1 1
Ee – Irradiance ( mW / cm2 )
10
Figure 3. Reverse Light Current vs. Irradiance
1000
100
10
VR=5V
1
0.1
101 102 103 104
94 8466
EA – Illuminance ( lx )
Figure 4. Reverse Light Current vs. Illuminance
100
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
l=950nm
1
0.1 1
10 100
94 8467
VR – Reverse Voltage ( V )
Figure 5. Reverse Light Current vs. Reverse Voltage
S153P
Vishay Telefunken
80
E=0
f=1MHz
60
40
20
0
0.1 1
10 100
94 8407
VR – Reverse Voltage ( V )
Figure 6. Diode Capacitance vs. Reverse Voltage
1.0
0.8
0.6
0.4
0.2
0
350
94 8420
550 750 950
l – Wavelength ( nm )
1150
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0° 10 20
°°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
94 8475
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81535
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
3 (5)




Part Number S153
Description Silicon PIN Photodiode
Maker Vishay Telefunken
Total Page 5 Pages
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