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ST110S04P1VPBF Datasheet

Phase Control Thyristors

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ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors (Stud Version), 110 A
TO-209AC (TO-94)
PRODUCT SUMMARY
IT(AV)
110 A
FEATURES
• Center gate
• International standard case TO-209AC (TO-94)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic glass-metal case with ceramic insulator
(Glass-metal seal over 1200 V)
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
ST110S
04
08
12
16
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
400
800
1200
1600
VALUES
110
90
175
2700
2830
36.4
33.2
400 to 1600
100
- 40 to 125
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
500
900
1300
1700
UNITS
A
°C
A
kA2s
V
μs
°C
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
20
Document Number: 94393 For technical questions within your region, please contact one of the following:
Revision: 17-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

ST110S04P1VPBF Datasheet

Phase Control Thyristors

No Preview Available !

ST110S04P1VPBF pdf
www.DataSheet.co.kr
ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
DC at 85 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
VALUES
110
90
175
2700
2830
2270
2380
36.4
33.2
25.8
23.5
364
0.90
0.92
1.79
1.81
1.52
600
1000
UNITS
A
°C
A
kA2s
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
VALUES
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
500
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
2.0
ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
UNITS
A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES UNITS
500 V/μs
20 mA
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94393
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-Aug-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ST110S04P1VPBF
Description Phase Control Thyristors
Maker Vishay Siliconix
Total Page 10 Pages
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