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Vishay Intertechnology Electronic Components Datasheet

SI4736DY Datasheet

N-Channel 30-V (D-S) MOSFET

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SI4736DY pdf
SPICE Device Model Si4736DY
Vishay Siliconix
www.DataSheet4U.com
N-Channel 30-V (D-S) MOSFET With Schottky Diode
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 71012
S-51870Rev. B, 12-Sep-05
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4736DY Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

SI4736DY pdf
SPICE Device Model Si4736DY
Vishay Siliconix
www.DataSheet4U.com
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
VGS(th)
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
gfs
Schottky Diode Forward Voltagea
VSD
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 μA
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 12 A
VDS = 15 V, ID = 13 A
IS = 3 A, VGS = 0 V
IS = 3 A, VGS = 0 V, TJ = 125°C
VDS = 15 V, VGS = 4.5 V, ID = 13 A
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, RG = 6 Ω
IF = 3 A, di/dt = 100 A/μs
Simulated Measured
Data
Data
1.1
596
0.0079
0.0090
62
0.76
0.61
0.0070
0.0083
56
0.495
0.43
37 37
10 10
8.8 8.8
17 17
6 14
83 102
37 26
34 42
Unit
V
A
Ω
S
V
nC
ns
www.vishay.com
2
Document Number: 71012
S-51870Rev. B, 12-Sep-05


Part Number SI4736DY
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 3 Pages
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