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Vishay Intertechnology Electronic Components Datasheet

SB1H90 Datasheet

High Voltage Schottky Rectifiers

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SB1H90 pdf
New Product
SB1H90, SB1H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DO-204AL (DO-41)
FEATURES
• High barrier technology for improved high TJ
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Very low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
90 V, 100 V
IFSM
50 A
VF 0.62 V
IR 1.0 μA
TJ max.
175 °C
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
Voltage rate of change (rated VR)
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
Maximum operating junction temperature
Storage temperature range
dV/dt
IRRM
TJ
TSTG
SB1H90
90
63
90
SB1H100
100
70
100
1.0
50
10 000
1.0
175
- 55 to + 175
UNIT
V
V
V
A
A
V/μs
A
°C
°C
Document Number: 88716 For technical questions within your region, please contact one of the following:
Revision: 04-Aug-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SB1H90 Datasheet

High Voltage Schottky Rectifiers

No Preview Available !

SB1H90 pdf
SB1H90, SB1H100
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB1H90
SB1H100
Maximum instantaneous forward voltage
IF = 1.0 A
IF = 2.0 A
Maximum reverse current at rated VR
Notes
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF (1)
IR (2)
0.77
0.62
0.86
0.70
1.0
0.5
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum thermal resistance
RθJA (1)
RθJL (1)
Note
(1) P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
SB1H90
SB1H100
57
15
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SB1H100-E3/54
0.34
54
SB1H100-E3/73
SB1H100HE3/54 (1)
SB1H100HE3/73 (1)
0.34
0.34
0.34
73
54
73
Note
(1) AEC-Q101 qualified
BASE QUANTITY
5500
3000
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.2 100
TJ = 175 °C
1.0
10
0.8 TJ = 150 °C
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175 200
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
1 TJ = 125 °C
TJ = 100 °C
0.1
0.01
0
TJ = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88716
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 04-Aug-09


Part Number SB1H90
Description High Voltage Schottky Rectifiers
Maker Vishay Siliconix
Total Page 4 Pages
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