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Vishay Intertechnology Electronic Components Datasheet

H11D4 Datasheet

Optocoupler

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H11D4 pdf
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H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
FEATURES
• CTR at IF = 10 mA, BVCER = 10 V: 20 %
• Good CTR linearly with forward current
• Low CTR degradation
A1
C2
NC 3
• Very high collector emitter breakdown voltage
6 B - H11D1/H11D2, BVCER = 300 V
- H11D3/H11D4, BVCER = 200 V
5C
• Isolation test voltage: 5300 VRMS
4 E • Low coupling capacitance
• High common mode transient immunity
• Package with base connection
ii117799000044 • Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
DESCRIPTION
The H11D1/H11D2/H11D3/H11D4 are optocouplers with
very high BVCER. They are intended for telecommunications
applications or any DC application requiring a high blocking
voltage.
The H11D1/H11D2 are identical and the H11D3/H11D4 are
identical.
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
available with option 1
• BSI IEC60950 IEC60065
• FIMKO
APPLICATIONS
• Telecommunications
• Replace relays
ORDER INFORMATION
PART
H11D1
H11D2
H11D3
H11D4
H11D1-X007
H11D1-X009
H11D2-X007
H11D3-X007
Note
For additional information on the available options refer to option information.
REMARKS
CTR > 20 %, DIP-6
CTR > 20 %, DIP-6
CTR > 20 %, DIP-6
CTR > 20 %, DIP-6
CTR > 20 %, SMD-6 (option 7)
CTR > 20 %, SMD-6 (option 9)
CTR > 20 %, SMD-6 (option 7)
CTR > 20 %, SMD-6 (option 7)
Document Number: 83611
Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com
1



Vishay Intertechnology Electronic Components Datasheet

H11D4 Datasheet

Optocoupler

No Preview Available !

H11D4 pdf
H11D1/H11D2/H11D3/H11D4
www.DVaitasShheaeyt4US.coemmiconductors Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
DC forward current
Surge forward current
t 10 µs
Power dissipation
OUTPUT
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
Insulation thickness between emitter
and detector
Creepage distance
Clearance distance
Comparative tracking index
Isolation resistance
Storage temperature range
Operating temperature range
Junction temperature
Soldering temperature
between emitter and detector,
refer to climate DIN 50014, part 2,
Nov. 74
per DIN IEC 112/VDE 0303, part 1
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
max. 10 s, dip soldering: distance
to seating plane 1.5 mm
PART
H11D1
H11D2
H11D3
H11D4
H11D1
H11D2
H11D3
H11D4
SYMBOL
VR
IF
IFSM
Pdiss
VCE
VCE
VCE
VCE
VCBO
VCBO
VCBO
VCBO
VBEO
IC
Pdiss
VALUE
6
60
2.5
100
300
300
200
200
300
300
200
200
7
100
300
UNIT
V
mA
A
mW
V
V
V
V
V
V
V
V
V
mA
mW
VISO
RIO
RIO
Tstg
Tamb
Tj
Tsld
5300
0.4
7
7
175
1012
1011
- 55 to + 150
- 55 to + 100
100
260
VRMS
mm
mm
mm
Ω
Ω
°C
°C
°C
°C
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
www.vishay.com
2
For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611
Rev. 1.5, 19-Nov-07



Vishay Intertechnology Electronic Components Datasheet

H11D4 Datasheet

Optocoupler

No Preview Available !

H11D4 pdf
www.DataSheet4U.com
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output, Vishay Semiconductors
With Base Connection, High BVCER Voltage
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Coupling capacitance
Current transfer ratio
Collector emitter,
saturation voltage
Collector emitter, leakage current
TEST CONDITION
IF = 10 mA
IR = 10 µA
VR = 6 V
VR = 0 V, f = 1 MHz
ICE = 1 mA, RBE = 1 MΩ
IEB = 100 µA
VCE = 10 V, f = 1 MHz
VCB = 10 V, f = 1 MHz
VEB = 5 V, f = 1 MHz
IF = 10 mA, VCE = 10 V,
RBE = 1 MΩ
IF = 10 mA, IC = 0.5 mA,
RBE = 1 MΩ
VCE = 200 V, RBE = 1 MΩ
VCE = 300 V, RBE = 1 MΩ,
Tamb = 100 °C
PART
H11D1
H11D2
H11D3
H11D4
H11D1
H11D2
H11D1
H11D2
SYMBOL
VF
VR
IR
CO
RthJA
BVCER
BVCER
BVCER
BVCER
BVEBO
CCE
CCB
CEB
Rth
CC
IC/IF
VCEsat
ICER
ICER
ICER
ICER
MIN.
6
300
300
200
200
7
20
TYP.
1.1
0.01
25
750
7
8
38
250
0.6
0.25
MAX.
1.5
10
0.4
100
100
250
250
UNIT
V
V
µA
pF
K/W
V
V
V
V
V
pF
pF
pF
K/W
pF
%
V
nA
nA
µA
µA
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
Current transfer ratio
IF = 10 mA, VCE = 10 V,
RBE = 1 MΩ
PART
SYMBOL
CTR
MIN.
20
TYP.
MAX.
UNIT
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Turn-on time
Rise time
Turn-off time
Fall time
IC = 2 mA (to be adjusted by varying IF),
RL = 100 Ω, VCC = 10 V
IC = 2 mA (to be adjusted by varying IF),
RL = 100 Ω, VCC = 10 V
IC = 2 mA (to be adjusted by varying IF),
RL = 100 Ω, VCC = 10 V
IC = 2 mA (to be adjusted by varying IF),
RL = 100 Ω, VCC = 10 V
Note
Switching times measurement-test circuit and waveforms
SYMBOL
ton
tr
toff
tf
MIN.
TYP.
5
2.5
6
5.5
MAX.
UNIT
µs
µs
µs
µs
Document Number: 83611
Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com
3




Part Number H11D4
Description Optocoupler
Maker Vishay Siliconix
Total Page 8 Pages
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