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Vishay Intertechnology Electronic Components Datasheet

71108 Datasheet

N-Channel 30-V (D-S) MOSFET

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71108 pdf
N-Channel 30-V (D-S) MOSFET
Si3454ADV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
30 0.060 @ VGS = 10 V
0.085 @ VGS = 4.5 V
ID (A)
4.5
3.8
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3454ADV-T1
Si3454ADV-T1—E3 (Lead Free)
Marking Code:
A4xxx
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
4.5 3.4
3.6 2.7
20
1.7 1.0
2.0 1.14
1.3 0.73
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71108
S-40424—Rev. C, 15-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
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1



Vishay Intertechnology Electronic Components Datasheet

71108 Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

71108 pdf
Si3454ADV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 4.5 A
VGS = 4.5 V, ID = 3.8 A
VDS = 10 V, ID = 4.5 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 10 V, ID = 4.5 A
ID ^ V1DAD, =VG15ENV,=R1L0=V,1R5 gW= 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0 3.0 V
"100
1
25
nA
mA
15 A
0.048
0.070
10
0.8
0.060
0.085
1.2
W
S
V
9 15
2.5 nC
1.5
0.5 2.9 W
10 20
10 20
20 35 ns
7 15
40 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 10 thru 5 V
16
4V
12
8
4 3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS Drain-to-Source Voltage (V)
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Transfer Characteristics
20
TC = 55_C
16
25_C
125_C
12
8
4
0
0123456
VGS Gate-to-Source Voltage (V)
Document Number: 71108
S-40424—Rev. C, 15-Mar-04



Vishay Intertechnology Electronic Components Datasheet

71108 Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

71108 pdf
Si3454ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
600
Capacitance
0.15
500 Ciss
400
0.10
0.05
VGS = 4.5 V
VGS = 10 V
0.00
0 4 8 12 16
ID Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 4.5 A
8
6
4
2
20
300
200
Coss
100
0 Crss
0
6
12 18 24 30
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6 ID = 4.5 A
1.4
1.2
1.0
0.8
0
0 2 4 6 8 10
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
0.10
ID = 4.5 A
TJ = 25_C
0.05
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD Source-to-Drain Voltage (V)
Document Number: 71108
S-40424—Rev. C, 15-Mar-04
0.00
0
2468
VGS Gate-to-Source Voltage (V)
10
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Part Number 71108
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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