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Vishay Intertechnology Electronic Components Datasheet

71090 Datasheet

P-Channel 30-V (D-S) MOSFET

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71090 pdf
P-Channel 30-V (D-S) MOSFET
Si3455ADV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.100 @ VGS = 10 V
30
0.170 @ VGS = 4.5 V
ID (A)
3.5
2.7
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3455ADV-T1
Si3455ADV-T1—E3 (Lead Free)
Marking Code:
A5xxx
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
3.5
2.7
2.8
2.1
20
1.7
0.95
2.0 1.14
1.3 0.73
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71090
S-40424—Rev. C, 15-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

71090 Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

71090 pdf
Si3455ADV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85_C
VDS v 5 V, VGS = 10 V
VGS = 10 V, ID = 3.5 A
VGS = 4.5 V, ID = 2.7 A
VDS = 15 V, ID = 3.5 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 10 V, ID = 3.5 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
20
3.0
"100
1
5
0.080
0.140
6
0.8
0.100
0.170
1.2
V
nA
mA
A
W
S
V
8.5 13
2.2 nC
1.5
10 20
7 15
20 35 ns
10 20
30 60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 10 thru 7 V
16
6V
5V
12
8
4V
4
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS Drain-to-Source Voltage (V)
Transfer Characteristics
20
TC = 55_C
16
25_C
12
125_C
8
4
0
01234567
VGS Gate-to-Source Voltage (V)
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Document Number: 71090
S-40424—Rev. C, 15-Mar-04



Vishay Intertechnology Electronic Components Datasheet

71090 Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

71090 pdf
Si3455ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30
Capacitance
700
0.24
0.18
VGS = 4.5 V
600 Ciss
500
400
0.12
0.06
VGS = 10 V
0.00
0 4 8 12 16
ID Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 3.5 A
8
20
300
200 Coss
100
Crss
0
06
12 18 24 30
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 3.5 A
1.4
6 1.2
4 1.0
2 0.8
0
0369
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.30
0.24
0.18
ID = 3.5 A
TJ = 25_C
0.12
0.06
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD Source-to-Drain Voltage (V)
Document Number: 71090
S-40424—Rev. C, 15-Mar-04
0.00
0
2468
VGS Gate-to-Source Voltage (V)
10
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Part Number 71090
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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