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Vishay Intertechnology Electronic Components Datasheet

70511 Datasheet

N-Channel 75-V (D-S) 200C MOSFET

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70511 pdf
SPICE Device Model SUM110N08-05
Vishay Siliconix
N-Channel 75-V (D-S) 200°C MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 70511
09-Jun-04
www.vishay.com
1



Vishay Intertechnology Electronic Components Datasheet

70511 Datasheet

N-Channel 75-V (D-S) 200C MOSFET

No Preview Available !

70511 pdf
SPICE Device Model SUM110N08-05
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Forward Voltage a
Dynamic b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Reverse Recovery Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = VGS, ID = 250 µA
VDS > 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125°C
VGS = 10 V, ID = 30 A, TJ = 200°C
VDS = 15 V, ID = 30 A
IS = 110 A, VGS = 0 V
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 35 V, VGS = 10 V, ID = 110 A
VDD = 35 V, RL = 0.40
ID 110 A, VGEN = 10 V, RG = 2.5
IF = 85 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
3.1
1197
0.0038
0.0063
0.0084
109
0.92
7663
936
406
139
36
45
88
110
130
149
55
0.0038
1
7900
950
550
145
30
45
25
200
65
165
80
Unit
V
A
S
V
Pf
NC
Ns
www.vishay.com
2
Document Number: 70511
09-Jun-04



Vishay Intertechnology Electronic Components Datasheet

70511 Datasheet

N-Channel 75-V (D-S) 200C MOSFET

No Preview Available !

70511 pdf
SPICE Device Model SUM110N08-05
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 70511
09-Jun-04
www.vishay.com
3




Part Number 70511
Description N-Channel 75-V (D-S) 200C MOSFET
Maker Vishay Siliconix
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