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Vishay Intertechnology Electronic Components Datasheet

SMA5JxxA Datasheet

(SMA5J5 - SMA5J40CA) High Power Density Surface Mount

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SMA5JxxA pdf
DO-214AC
(SMA)
SMA5J5.0 thru 40CA
New Product
Vishay Semiconductors
formerly General Semiconductor
High Power Density Surface Mount TRANSZORB®
Transient Voltage Suppressors Stand-off Voltage 5.0 to 40 V
Peak Pulse Power 500 W
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
mDimensions in inches
oand (millimeters)
.c0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.066 MIN.
(1.68 MIN.)
0.074 MAX.
(1.88 MAX.)
0.060 MIN.
(1.52 MIN.)
0.208
(5.28) REF
U0.060 (1.52)
t40.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
eeMechanical Data
hCase: JEDEC DO-214AC molded plastic over
passivated chip
STerminals: Solder plated, solderable per MIL-STD-750,
Method 2026
taHigh temperature soldering guaranteed:
250°C/10 seconds at terminals
aPolarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
.DMounting Position: Any Weight: 0.002oz., 0.064g
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 500W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
• Very fast response time
Devices for Bidirectional Applications
wFor bi-directional devices, use suffix C or CA (e.g. SMA5J10CA). Electrical characteristics apply in both directions.
wMaximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
w omPeak pulse power dissipation with
.ca 10/1000µs waveform(1,2) (see fig. 1)
PPPM
UPeak pulse current with a 10/1000µs waveform(1)
IPPM
t4Peak forward surge current 8.3ms single half sine-wave
euni-directional only(2)
IFSM
heTypical thermal resistance, junction to ambient(3)
RθJA
STypical thermal resistance, junction to lead
RθJL
taOperating junction and storage temperature range
TJ, TSTG
aNotes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2
.D(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
500
See Next Table
40
80
25
–55 to +150
W
A
A
°C/W
°C/W
°C
wwDocument Number 88875
w11-Mar-04
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SMA5JxxA Datasheet

(SMA5J5 - SMA5J40CA) High Power Density Surface Mount

No Preview Available !

SMA5JxxA pdf
SMA5J5.0 thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 25A (uni-directional only)
Device Type
SMA5J5.0
SMA5J5.0A(5)
SMA5J6.0
SMA5J6.0A
SMA5J6.5
SMA5J6.5A
SMA5J7.0
SMA5J7.0A
SMA5J7.5
SMA5J7.5A
SMA5J8.0
SMA5J8.0A
SMA5J8.5
SMA5J8.5A
SMA5J9.0
SMA5J9.0A
SMA5J10
SMA5J10A
SMA5J11
SMA5J11A
SMA5J12
SMA5J12A
SMA5J13
SMA5J13A
SMA5J14
SMA5J14A
SMA5J15
SMA5J15A
SMA5J16
SMA5J16A
SMA5J17
SMA5J17A
SMA5J18
SMA5J18A
SMA5J20
SMA5J20A
SMA5J22
SMA5J22A
SMA5J24
SMA5J24A
SMA5J26
SMA5J26A
SMA5J28
SMA5J28A
SMA5J30
SMA5J30A
Device
Marking
Code
UNI BI
5AD 5AD
5AE 5AE
5AF 5AF
5AG 5AG
5AH 5AH
5AK 5AK
5AL 5AL
5AM 5AM
5AN 5AN
5AP 5AP
5AQ 5AQ
5AR 5AR
5AS 5AS
5AT 5AT
5AU 5AU
5AV 5AV
5AW 5AW
5AX 5AX
5AY 5AY
5AZ 5AZ
5BD 5BD
5BE 5BE
5BF 5BF
5BG 5BG
5BH 5BH
5BK 5BK
5BL 5BL
5BM 5BM
6BN 5BN
5BP 5BP
5BQ 5BQ
5BR 5BR
5BS 5BS
5BT 5BT
5BU 5BU
5BV 5BV
5BW 5BW
5BX 5BX
5BY 5BY
5BZ 5BZ
5CD 5CD
5CE 5CE
5CF 5CF
5CG 5CG
5CH 5CH
5CK 5CK
Breakdown
Voltage
V(BR) (V)(1)
Min Max
6.40 7.82
6.40 7.07
6.67 8.15
6.67 7.37
7.22 8.82
7.22 7.98
7.78 9.51
7.78 8.60
8.33 10.2
8.33 9.21
8.89 10.9
8.89 9.83
9.44 11.5
9.44 10.4
10.0 12.2
10.0 11.1
11.1 13.6
11.1 12.3
12.2 14.9
12.2 13.5
13.3 16.3
13.3 14.7
14.4 17.6
14.4 15.9
15.6 19.1
15.6 17.2
16.7 20.4
16.7 18.5
17.8 21.8
17.8 19.7
18.9 23.1
18.9 20.9
20.0 24.4
20.0 22.1
22.2 27.1
22.2 24.5
24.4 29.8
24.4 26.9
26.7 32.6
26.7 29.5
28.9 35.3
28.9 31.9
31.1 38.0
31.1 34.4
33.3 40.7
33.3 36.8
Test
Current
at IT (mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
VWM (V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge Clamping
at VWM
ID (µA) (3)
Current IPPM Voltage at IPPM
(A)(2)
VC (V)
800 52.1 9.6
800 54.3 9.2
800 43.9 11.4
800 48.5 10.3
500 40.7 12.3
500 44.6 11.2
200 37.6 13.3
200 41.7 12.0
100 35.0 14.3
100 38.8 12.9
50 33.3 15.0
50 36.8 13.6
10 31.4 15.9
10 34.7 14.4
5.0 29.6 16.9
5.0 32.5 15.4
1.0 26.6 18.8
1.0 29.4 17.0
1.0 24.9 20.1
1.0 27.5 18.2
1.0 22.7 22.0
1.0 25.1 19.9
1.0 21.0 23.8
1.0 23.3 21.5
1.0 19.4 25.8
1.0 21.6 23.2
1.0 18.6 26.9
1.0 20.5 24.4
1.0 17.4 28.8
1.0 19.2 26.0
1.0 16.4 30.5
1.0 18.1 27.6
1.0 15.5 32.2
1.0 17.1 29.2
1.0 14.0 35.8
1.0 15.4 32.4
1.0 12.7 39.4
1.0 14.1 35.5
1.0 11.6 43.0
1.0 12.9 38.9
1.0 10.7 46.6
1.0 11.9 42.1
1.0 10.0 50.0
1.0 11.0 45.4
1.0 9.3 53.5
1.0 10.3 48.4
Notes: (1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMA5J5.0CA, the maximum V(BR) is 7.25V.
www.vishay.com
2
Document Number 88875
11-Mar-04


Part Number SMA5JxxA
Description (SMA5J5 - SMA5J40CA) High Power Density Surface Mount
Maker Vishay Intertechnology
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1 SMA5Jxx (SMA5J5 - SMA5J40CA) High Power Density Surface Mount Vishay Intertechnology
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