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Vishay Intertechnology Electronic Components Datasheet

VS-VSKS500-08PbF Datasheet

MAP Block Power Module Single Thyristor

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VS-VSKS500-08PbF pdf
www.vishay.com
VS-VSKS500/08PbF
Vishay Semiconductors
MAP Block Power Module Single Thyristor, 500 A
MAP Block Power
PRODUCT SUMMARY
IT(AV)
500 A
Type
Modules - Thyristor, Standard
Package
MAP BLOCK
Circuit
Single Thrysistor
FEATURES
• Electrically isolated base plate
• 3000 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Battery chargers
• Welders
• Power converters
• Alternators
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VDRM/VRRM
IT(AV)
76 °C
ITSM
50 Hz
60 Hz
50 Hz
I2t
60 Hz
I2t
TJ Range
VALUES
800
500
14 000
14 658
980
894
9800
- 40 to 130
UNITS
V
A
A
kA2s
kA2s
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-VSKS500/08PbF
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
800
VRSM/VDSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
IRRM/IDRM
AT 130 °C
mA
80
Revision: 19-Dec-13
1 Document Number: 93160
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-VSKS500-08PbF Datasheet

MAP Block Power Module Single Thyristor

No Preview Available !

VS-VSKS500-08PbF pdf
www.vishay.com
VS-VSKS500/08PbF
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
Maximum I2t for fusing
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
SWITCHING
PARAMETER
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and off-state
leakage current
RMS insulation voltage
SYMBOL
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
I2t
VT(TO)1
VT(TO)2
rt1
180° conduction half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
(I > x IT(AV)), TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
rt2 (I > x IT(AV)), TJ maximum
VTM TJ = 25 °C, 500 A Ipk
VALUES
500
76
785
16 646
17 430
14 000
14 658
1385
1265
894
894
1385
0.6839
0.7598
0.393
0.389
1.1
UNITS
A
°C
A
kA2s
kA2s
V
m
V
SYMBOL
td
tq
TEST CONDITIONS
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C, It = 400 A
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 V
dV/dt = 20 V/μs, Gate 0 V 100 , tp = 500 μs
VALUES
1.3
200
UNITS
μs
SYMBOL
TEST CONDITIONS
dV/dt
IDRM,
IRRM
VINS
TJ = TJ maximum linear to 67 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50 Hz, circuit to base, all terminal shorted, t = 1 s
VALUES
500
UNITS
V/μs
80
3000
mA
V
Revision: 19-Dec-13
2 Document Number: 93160
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-VSKS500-08PbF
Description MAP Block Power Module Single Thyristor
Maker Vishay
Total Page 8 Pages
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