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Vishay Intertechnology Electronic Components Datasheet

VS-HFA70EA120 Datasheet

Ultrafast Soft Recovery Diode

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VS-HFA70EA120 pdf
www.vishay.com
VS-HFA70EA120
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 70 A
SOT-227
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Antiparallel diodes
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VR
VF (typical)
trr (typical)
IF(DC) at TC, per module
Package
1200 V
2.2 V
48 ns
70 A at 121 °C
SOT-227
DESCRIPTION/APPLICATIONS
This SOT-227 modules with HEXFRED® rectifier are in
antiparallel configuration. The antiparallel configuration is
used for simple series rectifier and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Continuous forward current, per leg
Single pulse forward current
VR
IF
IFSM
Maximum power dissipation, per leg
PD
RMS isolation voltage
Operating junction and storage
temperature range
VISOL
TJ, TStg
TEST CONDITIONS
TC = 121 °C
TJ = 25 °C
TC = 25 °C
TC = 100 °C
Any terminal to case, t = 1 minute
MAX.
1200
35
350
357
143
2500
- 55 to 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR IR = 100 μA
1200
Forward voltage, per leg
VFM
Reverse leakage current, per leg
IRM
IF = 30 A
IF = 60 A
IF = 30 A, TJ = 125 °C
IF = 60 A, TJ = 125 °C
IF = 30 A, TJ = 150 °C
IF = 60 A, TJ = 150 °C
VR = VR rated
TJ = 125 °C, VR = VR rated
TJ = 150 °C, VR = VR rated
-
-
-
-
-
-
-
-
-
TYP.
-
2.2
2.8
2.13
2.70
2.04
2.65
2.0
1.6
5
MAX.
-
3.0
4.0
-
-
-
-
75
5
10
UNITS
V
μA
mA
Revision: 23-Jul-13
1 Document Number: 94747
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-HFA70EA120 Datasheet

Ultrafast Soft Recovery Diode

No Preview Available !

VS-HFA70EA120 pdf
www.vishay.com
VS-HFA70EA120
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time, per leg
Peak recovery current, per leg
Reverse recovery charge, per leg
Junction capacitance, per leg
trr
IRRM
Qrr
CT
IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 50 A
dIF/dt = - 200 A/μs
VR = 200 V
TJ = 125 °C
VR = 1200 V
-
-
-
-
-
-
-
-
48
145
218
13
19
910
1920
27
MAX.
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both legs conducting
RthJC
Case to heatsink
Weight
RthCS Flat, greased surface
Mounting torque
Case style
MIN.
-
-
-
-
-
TYP. MAX.
- 0.35
- 0.175
0.05 -
30 -
- 1.3
SOT-227
UNITS
°C/W
g
Nm
Revision: 23-Jul-13
2 Document Number: 94747
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-HFA70EA120
Description Ultrafast Soft Recovery Diode
Maker Vishay
Total Page 7 Pages
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