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Vishay Intertechnology Electronic Components Datasheet

VS-GT400TH60N Datasheet

Molding Type Module IGBT

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VS-GT400TH60N pdf
www.vishay.com
VS-GT400TH60N
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 600 V and 400 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 400 A, 25 °C
Package
Circuit
600 V
400 A
1.60 V
Double INT-A-PAK
Half bridge
FEATURES
• Low VCE(on) trench IGBT technology
• Low switching losses
• 5 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Speed: 0 kHz to 20 kHz
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current
Pulsed collector current
IC
ICM (1)
TC = 25 °C
TC = 80 °C
tp = 1 ms
Diode continuous forward current
IF
Diode maximum forward current
IFM
Maximum power dissipation
PD TJ = 175 °C
Short circuit withstand time
tSC TJ = 125 °C
I2t-value, diode
I2t VR = 0 V, t = 10 ms, TJ = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
600
± 20
530
400
800
400
800
1600
5
10 900
2500
UNITS
V
A
W
μs
A2s
V
Revision: 03-Jul-14
1 Document Number: 93488
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GT400TH60N Datasheet

Molding Type Module IGBT

No Preview Available !

VS-GT400TH60N pdf
www.vishay.com
VS-GT400TH60N
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter saturation voltage
Gate to emitter threshold voltage
Zero gate voltage collector current
Gate to emitter leakage current
V(BR)CES
VCE(on)
VGE(th)
ICES
IGES
VGE = 0 V, IC = 2 mA, TJ = 25 °C
VGE = 15 V, IC = 400 A, TJ = 25 °C
VGE = 15 V, IC = 400 A, TJ = 175 °C
VCE = VGE, IC = 4 mA, TJ = 25 °C
VCE = VCES, VGE = 0 V, TJ = 25 °C
VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN.
600
-
-
4.0
-
-
TYP.
-
1.6
2.0
-
-
-
MAX. UNITS
-
2.05
V
-
6.5
5.0 mA
400 nA
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
SYMBOL
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
ISC
Rgint
LCE
RCC’+EE’
TEST CONDITIONS
VCC = 400 V, IC = 400 A, Rg = 1.3 ,
VGE = ± 15 V, TJ = 25 °C
VCC = 400 V, IC = 400 A, Rg = 1.3 ,
VGE = ± 15 V, TJ = 175 °C
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tsc 5 μs, VGE = 15 V, TJ = 125 °C,
VCC = 360 V, VCEM 600 V
TC = 25 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
35
70
180
75
14.1
10.0
37
72
220
84
23.2
16.8
30.8
2.12
0.92
TBD
1.3
-
0.35
MAX. UNITS
-
-
ns
-
-
-
mJ
-
-
-
ns
-
-
-
mJ
-
-
- nF
-
-A
-
20 nH
- m
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode forward voltage
Diode reverse recovery charge
Diode peak reverse recovery current
Diode reverse recovery energy
VF IF = 400 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
Qrr
TJ = 125 °C
Irr
IF = 400 A, VR = 300 V,
dI/dt = - 7000 A/μs,
TJ = 25 °C
VGE = - 15 V
TJ = 125 °C
TJ = 25 °C
Erec
TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.38
1.41
15.5
28.5
265
335
3.5
7.5
MAX. UNITS
1.80
V
-
-
μC
-
-
A
-
-
mJ
-
Revision: 03-Jul-14
2 Document Number: 93488
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GT400TH60N
Description Molding Type Module IGBT
Maker Vishay
Total Page 6 Pages
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