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Vishay Intertechnology Electronic Components Datasheet

VS-GT300FD060N Datasheet

DIAP Low Profile 3-Levels Half-Bridge Inverter Stage

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VS-GT300FD060N pdf
www.vishay.com
VS-GT300FD060N
Vishay Semiconductors
DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A
PRODUCT SUMMARY
VCES
VCE(ON) typical
at IC = 300 A
IC at TC = 25 °C
Package
Circuit
600 V
1.72 V
379 A
DIAP low Profile
Three Levels Half Brigde
Inverter Stage
FEATURES
• Trench plus Field Stop IGBT technology
• FRED Pt® antiparallel and clamping diodes
• Short circuit capability
• Speed 4 kHz to 30 kHz
• Low stray internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATION
• Solar converters
• Uninterruptable power supplies
BENEFITS
• Direct mounting on heatsink
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCE(sat)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature
Storage temperature range
RMS isolation voltage
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
Power dissipation
D5 - D6 CLAMPING DIODE
TJ
TStg
VISOL
VCES
VGES
ICM
ILM
IC
PD
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Repetitive peak reverse voltage
Single pulse forward current
Diode continuous forward current
Power dissipation
D - D2 - D3 - D4 AP DIODE
VRRM
IFSM
IF
PD
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Single pulse forward current
Diode continuous forward current
Power dissipation
IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
IF
TC = 25 °C
TC = 80 °C
PD
TC = 25 °C
TC = 80 °C
Note
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
MAX.
175
- 40 to 175
3500
600
20
650
650
379
288
1250
792
600
800
215
161
500
317
800
215
161
500
317
UNITS
°C
V
A
W
V
A
W
A
W
Revision: 10-Jun-13
1 Document Number: 93569
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GT300FD060N Datasheet

DIAP Low Profile 3-Levels Half-Bridge Inverter Stage

No Preview Available !

VS-GT300FD060N pdf
www.vishay.com
VS-GT300FD060N
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
BVCES
VCE(ON)
VGE(th)
VGE(th)/TJ
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 300 A
VGE = 15 V, IC = 300 A, TJ = 125 °C
VCE = VGE, IC = 16.8 mA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
D5 - D6 CLAMPING DIODE
gfe VCE = 20 V, IC = 300 A
VGE VCE = 20 V, IC = 300 A
VGE = 0 V, VCE = 600 V
ICES
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IGES
VGE = ± 20 V, VCE = 0 V
Cathode to anode blocking voltage
Forward voltage drop
Reverse leakage current
D1 - D2 - D3 - D4 AP DIODE
VBR IR = 100 μA
IF = 150 A
VFM
IF = 150 A, TJ = 125 °C
VR = 600 V
IRM
VR = 600 V, TJ = 125 °C
Forward voltage drop
IF = 150 A
VFM
IF = 150 A, TJ = 125 °C
MIN. TYP. MAX. UNITS
600 -
-
- 1.72 2.5
- 1.93 -
2.9 4.8 7.5
V
- - 17.8 - mV/°C
- 315 -
S
- 7.9 -
V
- 0.4 250
μA
- 300 -
- - ± 500 nA
600 -
-
- 2.17 2.7
- 1.61 -
- 0.25 200
- 140 -
V
μA
- 2.17 2.7
- 1.61 -
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Total gate charge (turn-on)
Gate to ermitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Qg
Qge
Qgc
EON
EOFF
ETOT
EON
EOFF
ETOT
EON
EOFF
ETOT
td(on)
tr
td(off)
tf
IC = 300 A
VCC = 400 V
VGE = 15 V
IC = 150 A, VCC = 300 V
VGE = 15 V, Rg = 10 
L = 500 μH , TJ = 25 °C
IC = 300 A, VCC = 300 V
VGE = 15 V, Rg = 22 
L = 500 μH, TJ = 25 °C
IC = 150 A
VCC = 300 V
VGE = 15 V
Rg = 10 
L = 500 μH
TJ = 125 °C
MIN. TYP. MAX. UNITS
- 750 -
- 210 -
- 300 -
- 2.1 -
- 3.1 -
- 5.2 -
- 8.6 -
- 15.4 -
- 24 -
- 2.6 -
- 3.7 -
- 6.3 -
- 453 -
- 120 -
- 366 -
- 119 -
nC
mJ
ns
Revision: 10-Jun-13
2 Document Number: 93569
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GT300FD060N
Description DIAP Low Profile 3-Levels Half-Bridge Inverter Stage
Maker Vishay
Total Page 10 Pages
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