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Vishay Intertechnology Electronic Components Datasheet

VS-GT175DA120U Datasheet

Insulated Gate Bipolar Transistor

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VS-GT175DA120U pdf
www.vishay.com
VS-GT175DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 175 A
SOT-227
PRODUCT SUMMARY
VCES
IC(DC)
VCE(on) typical at 100 A, 25 °C
IF(DC)
Package
Circuit
1200 V
175 A at 90 °C (1)
1.73 V
32 A at 90 °C
SOT-227
Single Switch Diode
Note
(1) Maximum collector current admitted is 100 A, to not exceed the
maximum temperature of terminals
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery
• TJ maximum = 150 °C
• Fully isolated package
• Speed 4 kHz to 30 kHz
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Very low VCE(on)
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
TC = 25 °C
TC = 90 °C
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
TC = 25 °C
IF
TC = 90 °C
Gate to emitter voltage
Power dissipation, IGBT
VGE
TC = 25 °C
PD
TC = 90 °C
Power dissipation, diode
Isolation voltage
PD
VISOL
TC = 25 °C
TC = 90 °C
Any terminal to case, t = 1 min
Note
(1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals
MAX.
1200
288
175
450
450
54
32
± 20
1087
522
219
105
2500
UNITS
V
A
V
W
V
Revision: 13-Sep-13
1 Document Number: 93990
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GT175DA120U Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

VS-GT175DA120U pdf
www.vishay.com
VS-GT175DA120U
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
VBR(CES)
VCE(on)
VGE(th)
VGE = 0 V, IC = 250 μA
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 150 °C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 7.5 mA
VCE = VGE, IC = 250 μA, TJ = 125 °C
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
Forward voltage drop, diode
Gate to emitter leakage current
VGE = 0 V, VCE = 1200 V
ICES VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
IF = 40 A, VGE = 0 V
VFM IF = 40 A, VGE = 0 V, TJ = 125 °C
IF = 40 A, VGE = 0 V, TJ = 150 °C
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
4.9
-
-
-
-
-
-
-
-
-
TYP.
-
1.73
1.98
2.05
5
5.9
2.9
-17.6
0.9
0.85
4
3.12
3.15
3.25
-
MAX.
-
2.1
2.2
-
-
7.9
-
UNITS
V
- mV/°C
100
10
20
3.44
3.47
-
± 200
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Short circuit safe operating area
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
SCSOA
IC = 150 A (tp < 400 μs, D < 2 %),
VCC = 600 V, VGE = 15 V
IC = 100 A, VCC = 7200 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
IC = 100 A, VCC = 7200 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
Energy losses
include tail
and diode
recovery
Diode used
HFA16PB120
TJ = 150 °C, IC = 450 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 400 V, TJ = 125 °C
TJ = 150 °C, Rg = 22 ,
VGE = 15 V to 0 V, VCC = 900 V,
Vp = 1200 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
830
180
380
4.03
6.9
10.93
310
65
325
170
5.07
10.59
15.66
325
80
330
235
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
nC
mJ
ns
mJ
ns
Fullsquare
164
12
994
230
16.5
1864
-
-
-
-
-
-
ns
A
nC
ns
A
nC
10 μs
Revision: 13-Sep-13
2 Document Number: 93990
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GT175DA120U
Description Insulated Gate Bipolar Transistor
Maker Vishay
Total Page 10 Pages
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