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Vishay Intertechnology Electronic Components Datasheet

VS-GB90SA120U Datasheet

Insulated Gate Bipolar Transistor

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VS-GB90SA120U pdf
www.vishay.com
VS-GB90SA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 90 A
SOT-227
PRODUCT SUMMARY
VCES
VCE(on) typical at 75 A, 25 °C
IC DC
Package
Circuit
1200 V
3.3 V
90 A at 90 °C
SOT-227
Single Switch no Diode
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
TC = 25 °C
TC = 90 °C
Pulsed collector current
ICM
Clamped inductive load current
ILM
Gate to emitter voltage
VGE
Power dissipation, IGBT
TC = 25 °C
PD
TC = 90 °C
Isolation voltage
VISOL
Any terminal to case, t = 1 min
Note
(1) Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals
MAX.
1200
149
90
200
200
± 20
862
414
2500
UNITS
V
A
V
W
V
Revision: 13-Sep-13
1 Document Number: 94725
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GB90SA120U Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

VS-GB90SA120U pdf
www.vishay.com
VS-GB90SA120U
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
VBR(CES)
VCE(on)
Gate threshold voltage
VGE(th)
Temperature coefficient of threshold voltage VGE(th)/TJ
Collector to emitter leakage current
ICES
Gate to emitter leakage current
IGES
VGE = 0 V, IC = 250 μA
VGE = 15 V, IC = 75 A
VGE = 15 V, IC = 75 A, TJ = 125 °C
VGE = 15 V, IC = 75 A, TJ = 150 °C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 250 μA, TJ = 125 °C
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
VGE = ± 20 V
MIN.
1200
-
-
-
4
-
-
-
-
-
-
TYP.
-
3.3
3.6
3.7
5
3.2
-12
7
1.4
6.5
-
MAX.
-
3.8
3.9
-
6
-
-
250
10
20
± 250
UNITS
V
mV/°C
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
Energy losses
include tail
and diode
recovery
Diode used
HFA16PB120
TJ = 150 °C, IC = 200 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V, L = 500 μH
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
690
65
250
1.2
2.1
3.3
250
38
280
90
1.7
4.08
5.78
245
48
280
140
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
nC
mJ
ns
mJ
ns
Fullsquare
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
Thermal resistance junction to case
Thermal resistance case to heatsink
Weight
Mounting torque
Case style
TJ, TStg
RthJC
RthCS
Flat, greased surface
SOT-227
MIN.
-40
-
-
-
-
TYP.
-
-
0.05
30
-
MAX.
150
0.145
-
-
1.3
UNITS
°C
°C/W
g
Nm
Revision: 13-Sep-13
2 Document Number: 94725
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GB90SA120U
Description Insulated Gate Bipolar Transistor
Maker Vishay
Total Page 8 Pages
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