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Vishay Intertechnology Electronic Components Datasheet

VS-GB70NA60UF Datasheet

IGBT

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VS-GB70NA60UF pdf
www.vishay.com
VS-GB70NA60UF
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 70 A, 25 °C
IF DC
Package
Circuit
600 V
70 A at 88 °C
2.23 V
70 A at 86 °C
SOT-227
Chopper high side switch
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• Low VCE(on)
• FRED Pt® hyperfast rectifier
• Fully isolated package
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
TC = 25 °C
IF
TC = 80 °C
Peak diode forward current
IFM
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
111
76
120
120
113
75
200
± 20
447
250
236
132
2500
UNITS
V
A
V
W
V
Revision: 02-Aug-13
1 Document Number: 93103
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GB70NA60UF Datasheet

IGBT

No Preview Available !

VS-GB70NA60UF pdf
www.vishay.com
VS-GB70NA60UF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 35 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 70 A
VGE = 15 V, IC = 35 A, TJ = 125 °C
VGE = 15 V, IC = 70 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
VGE = 0 V, VCE = 600 V
ICES VGE = 0 V, VCE = 600 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR IR = 1 mA
IC = 35 A, VGE = 0 V
Diode forward voltage drop
VFM
IC = 70 A, VGE = 0 V
IC = 35 A, VGE = 0 V, TJ = 125 °C
IC = 70 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = VR rated
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
600
-
-
-
-
-
-
-
TYP.
-
1.69
2.23
2.07
2.89
3.9
-9
1
0.07
-
1.80
2.13
1.35
1.70
0.1
0.02
-
MAX.
-
1.88
2.44
2.31
3.21
5
-
100
2.0
-
2.33
2.71
1.81
2.32
50
3
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Qg
Qge IC = 50 A, VCC = 400 V, VGE = 15 V
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon IC = 70 A, VCC = 360 V,
Eoff VGE = 15 V, Rg = 5 
Etot L = 500 μH, TJ = 25 °C
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Eon
Eoff
Etot
td(on)
tr
IC = 70 A, VCC = 360 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
td(off)
tf
RBSOA
trr
TJ = 150 °C, IC = 120 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V
Diode peak reverse current
Irr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qrr
trr
Irr
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
Qrr
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
320
42
110
1.15
1.16
2.31
1.27
1.28
2.55
208
69
208
100
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
- 59 93
- 46
- 118 279
- 130 159
- 11 13
- 715 995
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
Revision: 02-Aug-13
2 Document Number: 93103
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GB70NA60UF
Description IGBT
Maker Vishay
Total Page 9 Pages
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