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Vishay Intertechnology Electronic Components Datasheet

VS-GB50YF120N Datasheet

IGBT Fourpack Module

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VS-GB50YF120N pdf
www.vishay.com
VS-GB50YF120N
Vishay Semiconductors
IGBT Fourpack Module, 50 A
ECONO2 4PACK
PRODUCT SUMMARY
VCES
IC at TC = 66 °C
VCE(on) (typical)
Package
Circuit
1200 V
50 A
3.49 V
ECONO2
4 PACK
FEATURES
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Copper baseplate
• Low stray inductance design
• Speed 8 kHz to 60 kHz
• Designed and qualified for industrial market
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Diode maximum forward current
Gate to emitter voltage
IFM
VGE
Maximum power dissipation (IGBT)
PD
Maximum operating junction temperature
Storage temperature range
Isolation voltage
TJ
TStg
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
1200
66
44
150
150
40
25
150
± 20
330
180
150
-40 to +125
AC 2500 (min)
UNITS
V
A
V
W
°C
V
Revision: 17-Apr-14
1 Document Number: 93653
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GB50YF120N Datasheet

IGBT Fourpack Module

No Preview Available !

VS-GB50YF120N pdf
www.vishay.com
VS-GB50YF120N
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
BV(CES)
VCE(ON)
VGE = 0 V, IC = 500 μA
IC = 50 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 50 A, VGE = 15 V, TJ = 125 °C
Gate threshold voltage
Threshold voltage temperature coefficient
VGE(th)
ΔVGE(th)/ΔTJ
IC = 75 A, VGE = 15 V, TJ = 125 °C
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Zero gate voltage collector current
Diode forward voltage drop
VGE = 0 V, VCE = 1200 V
ICES
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
IF = 50 A
IF = 75 A
VFM
IF = 50 A, TJ = 125 °C
IF = 75 A, TJ = 125 °C
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
4.0
-
-
-
-
-
-
-
-
TYP.
-
3.49
4.15
4.16
4.97
4.9
-10
11
600
3.30
3.90
3.6
4.37
-
MAX. UNITS
-
3.9
4.5
V
4.5
5.4
6.0
- mV/°C
250
1000
μA
4.5
5.0
V
4.8
5.5
± 200 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
QG
QGE
QGC
IC = 50 A
VCC = 600 V
VGE = 15 V
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon IC = 50 A, VCC = 600 V
Eoff VGE = 15 V, RG = 4.7 Ω, L = 500 μH
Etot TJ = 25 °C (1)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode peak reverse recovery current
Diode reverse recovery time
Total reverse recovery charge
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
SCSOA
Irr
trr
Qrr
IC = 50 A, VCC = 600 V
VGE = 15 V, RG = 4.7 Ω, L = 500 μH
TJ = 125 °C (1)
IC = 50 A, VCC = 600 V
VGE = 15 V, RG = 4.7 Ω, L = 500 μH
TJ = 125 °C
TJ = 150 °C, IC = 150 A
RG = 10 Ω, VGE = 15 V to 0 V
TJ = 150 °C
VCC = 900 V, VP = 1200 V
RG = 10 Ω, VGE = 15 V to 0 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VCC = 600 V
IF = 50 A
dI/dt = 7 A/μs
TJ = 25 °C
TJ = 125 °C
Note
(1) Energy losses include “tail” and diode reverse recovery
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
43
187
0.93
1.20
2.13
1.68
1.77
3.46
128
56
292
134
MAX. UNITS
-
- nC
-
-
-
-
mJ
-
-
-
-
-
ns
-
-
Fullsquare
10 -
- μs
- 1.3 2.3
A
- 2.0 3
- 0.453 0.49
μs
- 0.74 0.82
- 0.12 0.3
μC
- 0.4 1.5
Revision: 17-Apr-14
2 Document Number: 93653
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GB50YF120N
Description IGBT Fourpack Module
Maker Vishay
Total Page 10 Pages
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