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Vishay Intertechnology Electronic Components Datasheet

VS-GB50NA120UX Datasheet

IGBT

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VS-GB50NA120UX pdf
www.vishay.com
VS-GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 50 A, 25 °C
Package
Circuit
1200 V
50 A at 92 °C
3.22 V
SOT-227
High side switch
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED® clamping diode
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
TC = 25 °C
IF
TC = 80 °C
Gate to emitter voltage
VGE
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
84
57
150
150
76
52
± 20
431
242
278
156
2500
UNITS
V
A
V
W
V
Revision: 30-Jul-13
1 Document Number: 93101
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GB50NA120UX Datasheet

IGBT

No Preview Available !

VS-GB50NA120UX pdf
www.vishay.com
VS-GB50NA120UX
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES) VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 25 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 25 A, TJ = 125 °C
VGE = 15 V, IC = 50 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR IR = 1 mA
IC = 25 A, VGE = 0 V
Diode forward voltage drop
VFM IC = 50 A, VGE = 0 V
IC = 25 A, VGE = 0 V, TJ = 125 °C
IC = 50 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = VR rated
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
4
-
-
-
1200
-
-
-
-
-
-
-
TYP.
-
2.46
3.22
2.84
3.78
5
- 10
6
0.7
-
1.99
2.53
1.96
2.66
4
0.6
-
MAX.
-
-
2.80
3.60
3.0
4
-
50
2.0
-
2.42
3.00
2.30
3.08
50
3
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
TJ = 150 °C, IC = 150 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
43
187
2.72
1.11
3.83
3.94
2.31
6.25
191
53
223
143
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
- 129 161
- 11 14
- 700 1046
- 208 257
- 17 21
-
1768
2698
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
Revision: 30-Jul-13
2 Document Number: 93101
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GB50NA120UX
Description IGBT
Maker Vishay
Total Page 10 Pages
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