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Vishay Intertechnology Electronic Components Datasheet

VS-GB400AH120U Datasheet

Molding Type Module IGBT

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VS-GB400AH120U pdf
www.vishay.com
VS-GB400AH120U
Vishay Semiconductors
Molding Type Module IGBT,
1-in-1 Package, 1200 V and 400 A
Double INT-A-PAK
FEATURES
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• VCE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 400 A, 25 °C
Package
Circuit
1200 V
400 A
3.10 V
Double INT-A-PAK
Single switch with AP diode
TYPICAL APPLICATIONS
• Switching mode power supplies
• Inductive heating
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current at TJ = 150 °C
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM (1)
TC = 80 °C
Diode continuous forward current
IF
Diode maximum forward current
IFM
Maximum power dissipation
PD TJ = 150 °C
Short circuit withstand time
tSC TJ = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
1200
± 20
550
400
800
400
800
2841
10
2500
UNITS
V
A
W
μs
V
Revision: 24-Jul-14
1 Document Number: 94790
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GB400AH120U Datasheet

Molding Type Module IGBT

No Preview Available !

VS-GB400AH120U pdf
www.vishay.com
VS-GB400AH120U
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
V(BR)CES
VCE(on)
VGE(th)
ICES
IGES
TJ = 25 °C
VGE = 15 V, IC = 400 A, TJ = 25 °C
VGE = 15 V, IC = 400 A, TJ = 125 °C
VCE = VGE, IC = 4 mA, TJ = 25 °C
VCE = VCES, VGE = 0 V, TJ = 25 °C
VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN.
1200
-
-
4.4
-
-
TYP.
-
3.10
3.45
4.90
-
-
MAX. UNITS
-
3.60
V
-
3.60
5.0 mA
400 nA
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
SYMBOL
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
ISC
Rg
LCE
RCC’+EE’
TEST CONDITIONS
VCC = 600 V, IC = 400 A, Rg = 2.2 Ω,
VGE = ± 15 V, TJ = 25 °C
VCC = 600 V, IC = 400 A, Rg = 2.2 Ω,
VGE = ± 15 V, TJ = 125 °C
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp 10 μs, VGE = 15 V, TJ = 25 °C,
VCC = 600 V, VCEM 1200 V
TC = 25 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
680
142
638
99
19.0
32.5
690
146
669
108
26.1
36.7
33.7
2.99
1.21
MAX. UNITS
-
-
ns
-
-
-
mJ
-
-
-
ns
-
-
-
mJ
-
-
- nF
-
- 2600 -
A
- 0.5 -
Ω
- - 18 nH
- 0.32 - mΩ
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode forward voltage
Diode reverse recovery charge
Diode peak reverse recovery current
Diode reverse recovery energy
VF IF = 400 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
Qrr
TJ = 125 °C
IF = 400 A, VR = 600 V, TJ = 25 °C
Irr dIF/dt = - 2850 A/μs,
VGE = - 15 V
TJ = 125 °C
TJ = 25 °C
Erec
TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.95
1.85
24.1
44.3
220
295
13.9
24.8
MAX. UNITS
2.35
V
-
-
μC
-
-
A
-
-
mJ
-
Revision: 24-Jul-14
2 Document Number: 94790
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GB400AH120U
Description Molding Type Module IGBT
Maker Vishay
Total Page 6 Pages
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