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Vishay Intertechnology Electronic Components Datasheet

VS-GA200SA60UP Datasheet

Insulated Gate Bipolar Transistor

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VS-GA200SA60UP pdf
www.vishay.com
VS-GA200SA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
VCE(on) (typical)
VGE
IC
Package
Circuit
600 V
1.92 V
15 V
100 A
SOT-227
Single Switch no Diode
FEATURES
• Ultrafast: Optimized for minimum saturation
voltage and speed up to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 VAC/RMS)
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
VCES
Continuous collector current
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Gate to emitter voltage
Reverse voltage avalanche energy
RMS isolation voltage
Maximum power dissipation
Operating junction and storage
temperature range
Mounting torque
VGE
EARV
VISOL
PD
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
VCC = 80 % (VCES), VGE = 20 V,
L = 10 μH, RG = 2.0 ,
See fig. 13a
Repetitive rating; pulse width limited
by maximum junction temperature
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 100 °C
6-32 or M3 screw
MAX.
600
200
100
400
400
± 20
160
2500
500
200
- 55 to + 150
1.3 (12)
UNITS
V
A
V
mJ
V
W
°C
Nm
(lbf in)
Revision: 13-Sep-13
1 Document Number: 94364
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GA200SA60UP Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

VS-GA200SA60UP pdf
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperaure range
Thermal resistance, junction to case
Thermal resistance case to heatsink
Weight
TJ, TSTG
RthJC
RthCS
Flat, greased surface
Mounting torque
Case style
VS-GA200SA60UP
Vishay Semiconductors
MIN.
-55
-
-
-
-
TYP. MAX.
- 150
- 0.25
0.05 -
30 -
- 1.3
SOT-227
UNITS
°C/W
g
Nm
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Emitter to collector breakdown voltage
V(BR)CES
V(BR)ECS
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 1.0 A
Pulse width 80 μs; duty factor 0.1
%
Temperature coeff. of breakdown
voltage
V(BR)CES/TJ VGE = 0 V, IC = 10 mA
Collector to emitter saturation voltage
VCE(on)
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
VGE(th)
VGE(th)/TJ
gfe
IC = 100 A
IC = 200 A
IC = 100 A, TJ = 150 °C
VGE = 15 V
See fig. 2, 5
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 2.0 mA
VCE = 100 V, IC = 100 A
Pulse width 5.0 μs, single shot
Zero gate voltage collector current
Gate to emitter leakage current
ICES
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IGES
VGE = ± 20 V
MIN.
600
18
-
-
-
-
3.0
-
79
-
-
-
TYP.
-
-
0.38
1.60
1.92
1.54
-
-11
-
-
-
-
MAX.
-
-
UNITS
V
-
1.9
-
-
6.0
-
-
1.0
10
± 250
V/°C
V
mV/°C
S
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate-emitter charge (turn-on)
Gate-collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Internal emitter inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
IC = 100 A
VCC = 400 V
VGE = 15 V; See fig. 8
TJ = 25 °C
IC = 100 A
VCC = 480 V
VGE = 15 V
Rg = 2.0 
Energy losses include “tail”
See fig. 9, 10, 14
TJ = 150 °C
IC = 100 A, VCC = 480 V
VGE = 15 V, Rg = 2.0 
Energy losses include “tail”
See fig. 10, 11, 14
Measured 5 mm from package
VGE = 0 V
VCC = 30 V
f = 1.0 MHz; See fig. 7
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
770
100
260
54
79
130
300
0.98
3.48
4.46
56
75
160
460
7.24
5.0
16 500
1000
200
MAX.
1200
150
380
-
-
200
450
-
-
7.6
-
-
-
-
-
-
-
-
-
UNITS
nC
ns
mJ
ns
mJ
nH
pF
Revision: 13-Sep-13
2 Document Number: 94364
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GA200SA60UP
Description Insulated Gate Bipolar Transistor
Maker Vishay
Total Page 8 Pages
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