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Vishay Intertechnology Electronic Components Datasheet

VS-GA100TS60SFPbF Datasheet

Ultrafast Speed IGBT

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VS-GA100TS60SFPbF pdf
www.vishay.com
VS-GA100TS60SFPbF
Vishay Semiconductors
“Half-Bridge” IGBT INT-A-PAK,
(Standard Speed IGBT), 100 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 100 A, 25 °C
Package
Circuit
600 V
220 A
1.11 V
INT-A-PAK
Half bridge
FEATURES
• Standard speed PT IGBT technology
• Standard speed: DC to 1 kHz, optimized for
hard switching speed
• FRED Pt® antiparallel diodes with fast recovery
• Very low conduction losses
• Al2O3 DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for high current inverter stages (AC TIG welding
machines)
• Direct mounting to heatsink
• Very low junction to case thermal resistance
• Low EMI
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
VGE
VISOL
Maximum power dissipation
PD
Operating junction temperature range
Storage temperature range
TJ
TStg
TEST CONDITIONS
TC = 25 °C
TC = 130 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
600
220
100
440
440
± 20
2500
780
312
-40 to +150
-40 to +125
UNITS
V
A
V
W
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leakage current
Diode forward voltage drop
Gate to emitter leakage current
VBR(CES)
VCE(on)
VGE(th)
ICES
VFM
IGES
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 100 A
IC = 200 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
IC = 0.25 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IC = 100 A, VGE = 0 V
IC = 100 A, VGE = 0 V, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
3
-
-
-
-
-
TYP.
-
1.11
1.39
1.08
-
-
-
1.44
1.25
-
MAX.
-
1.28
-
1.22
6
1
10
1.96
1.54
± 250
UNITS
V
mA
V
nA
Revision: 09-Apr-14
1 Document Number: 94544
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GA100TS60SFPbF Datasheet

Ultrafast Speed IGBT

No Preview Available !

VS-GA100TS60SFPbF pdf
www.vishay.com
VS-GA100TS60SFPbF
Vishay Semiconductors
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge
Gate to emitter charge
Gate to collector charge
Rise time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on switching energy
Turn-off switching energy
Total switching energy
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qg
Qge
Qgc
tr
tf
Eon
Eoff
Ets
Eon
Eoff
Ets
Cies
Coes
Cres
trr
Irr
Qrr
trr
Irr
Qrr
IC = 100 A
VCC = 400 V
VGE = 15 V
IC = 100 A
VCC = 480 V
VGE = 15 V
Rg = 15 
TJ = 25 °C
IC = 100 A, VCC = 480 V
VGE = 15 V, Rg = 15 
TJ = 125 °C
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
IF = 50 A
dIF/dt = 200 A/μs
Vrr = 200 V
IF = 50 A
dIF/dt = 200 A/μs
Vrr = 200 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
640
108
230
0.45
1.0
4
23
27
6
35
41
16 250
1040
190
91
10.6
500
180
17
1633
MAX.
700
120
300
-
-
6
29
35
12
40
52
-
-
-
155
15
900
344
20.5
2315
UNITS
nC
μs
mJ
pF
ns
A
nC
ns
A
nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
Junction to case
per switch
per diode
TJ
TStg
RthJC
Case to sink per module
Mounting torque
case to heatsink
case to terminal 1, 2, 3
RthCS
Weight
MIN.
-40
-40
-
-
-
-
-
-
TYP.
-
-
-
-
0.1
-
-
185
MAX.
150
125
0.16
0.48
-
4
3
-
UNITS
°C
°C/W
Nm
g
Revision: 09-Apr-14
2 Document Number: 94544
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GA100TS60SFPbF
Description Ultrafast Speed IGBT
Maker Vishay
Total Page 7 Pages
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