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Vishay Intertechnology Electronic Components Datasheet

VS-ETF075Y60U Datasheet

EMIPAK-2B PressFit Power Module

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VS-ETF075Y60U pdf
www.vishay.com
VS-ETF075Y60U
Vishay Semiconductors
EMIPAK-2B PressFit Power Module
3-Levels Half-Bridge Inverter Stage, 75 A
EMIPAK-2B
(package example)
PRODUCT SUMMARY
Q1 - Q4 IGBT STAGE
VCES
600 V
VCE(ON) typical at IC = 75 A
1.7 V
IC at TC = 89 °C
75 A
Q2 - Q3 IGBT STAGE
VCES
VCE(ON) typical at IC = 75 A
IC at TC = 122 °C
Package
600 V
1.56 V
75 A
EMIPAK-2B
Circuit
3-Levels Half Bridge Inverter Stage
FEATURES
• Trench IGBT technology
• FRED Pt® clamping diodes
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal
resistance
• Short circuit rated
• Square RBSOA
• Integrated thermistor
• Operating frequency up to 20 kHz
• Low internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ETF075Y60U is an integrated solution for a multi level
inverter stage in a single package. The EMIPAK-2B package
is easy to use thanks to the PressFit pins and the exposed
substrate provides improved thermal performance. The
optimized layout also helps to minimize stray parameters,
allowing for better EMI performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 - Q4 IGBT
TJ
TStg
VISOL
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
VCES
VGES
ICM
ILM (1)
Continuous collector current
IC
Power dissipation
Q2 - Q3 IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
PD
VCES
VGES
ICM
ILM (1)
IC
Power dissipation
PD
TEST CONDITIONS
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
175
-40 to 150
3500
600
20
200
200
109
80
40
294
186
600
20
250
250
154
113
50
405
257
UNITS
°C
V
V
A
A
W
V
A
A
W
Revision: 27-Jun-14
1 Document Number: 94685
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-ETF075Y60U Datasheet

EMIPAK-2B PressFit Power Module

No Preview Available !

VS-ETF075Y60U pdf
www.vishay.com
VS-ETF075Y60U
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
D5 - D6 CLAMPING DIODE
Repetitive peak reverse voltage
Single pulse forward current
Diode continuous forward current
Power dissipation
D1 - D2 - D3 - D4 AP DIODE
VRRM
IFSM
IF
PD
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
Single pulse forward current
IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
Diode continuous forward current
IF TC = 80 °C
TSINK = 80 °C
Power dissipation
PD
TC = 25 °C
TC = 80 °C
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) VCC = 300 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 175 °C
600
270
78
55
28
174
110
250
72
70
31
107
68
V
A
W
A
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Q1 - Q4 IGBT
Collector to emitter breakdown voltage BVCES
Collector to emitter voltage
VCE(ON)
Gate threshold voltage
Temperature coefficient of threshold
voltage
VGE(th)
VGE(th)/TJ
VGE = 0 V, IC = 100 μA
VGE = 15 V, IC = 60 A
VGE = 15 V, IC = 75 A
VGE = 15 V, IC = 60 A, TJ = 125 °C
VGE = 15 V, IC = 75 A, TJ = 125 °C
VCE = VGE, IC = 2.1 mA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
gfe VCE = 20 V, IC = 75 A
VGE VCE = 20 V, IC = 75 A
ICES
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IGES VGE = ± 20 V, VCE = 0 V
MIN. TYP. MAX. UNITS
600 -
-
- 1.57 1.8
- 1.7 1.93
- 1.7 -
- 1.86 -
3.6 5.6 7.1
V
V
- -12 - mV/°C
- 51 -
S
- 9.6 -
V
- 0.0002 0.1
- 0.01 -
mA
- - ± 200 nA
Revision: 27-Jun-14
2 Document Number: 94685
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-ETF075Y60U
Description EMIPAK-2B PressFit Power Module
Maker Vishay
Total Page 15 Pages
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