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Vishay Intertechnology Electronic Components Datasheet

VS-ENQ030L120S Datasheet

EMIPAK-1B PressFit Power Module

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VS-ENQ030L120S pdf
www.vishay.com
VS-ENQ030L120S
Vishay Semiconductors
EMIPAK-1B PressFit Power Module
Neutral Point Clamp Topology, 30 A
EMIPAK-1B
(package example)
PRODUCT SUMMARY
TRENCH IGBT 1200 V STAGE
VCES
1200 V
VCE(ON) typical at IC = 30 A
2.12 V
IC at TC = 102 °C
30 A
TRENCH IGBT 600 V STAGE
VCES
VCE(ON) typical at IC = 30 A
IC at TC = 106 °C
Package
600 V
1.42 V
30 A
EMIPAK-1B
Circuit
3-Levels Neutral Point Clamp Topology
FEATURES
• Ultrafast Trench IGBT technology
• HEXFRED® and silicon carbide diode technology
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal
resistance
• Operating frequency up to 20 kHz
• Low internal inductances
• UL pending
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ENQ030L120S is an integrated solution for a neutral
point clamp topology in a single package. The EMIPAK-1B
package is easy to use thanks to the PressFit pins and the
exposed substrate provides improved thermal performance.
The optimized layout also helps to minimize stray
parameters, allowing for better EMI performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 - Q4 TRENCH IGBT 1200 V
TJ
TStg
VISOL
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
VCES
VGES
ICM
ILM (1)
Continuous drain current
IC
Power dissipation
Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
PD
VCES
VGES
ICM
ILM (2)
IC
Power dissipation
PD
TEST CONDITIONS
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
MAX.
150
- 40 to 150
3500
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
1200
± 30
120
120
61
40
21
216
121
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
600
± 20
130
130
64
42
25
174
97
UNITS
°C
V
V
A
A
W
V
A
A
W
Revision: 27-Jun-14
1 Document Number: 94684
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-ENQ030L120S Datasheet

EMIPAK-1B PressFit Power Module

No Preview Available !

VS-ENQ030L120S pdf
www.vishay.com
VS-ENQ030L120S
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
D1 - D4 HEXFRED ANTIPARALLEL DIODE
Single pulse forward current
Diode continuous forward current
IFSM
IF
Power dissipation
PD
D2 - D3 SILICON CARBIDE ANTIPARALLEL DIODE
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
Single pulse forward current
IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
Diode continuous forward current
IF TC = 80 °C
TSINK = 80 °C
Power dissipation
PD
TC = 25 °C
TC = 80 °C
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) VCC = 600 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
(2) VCC = 300 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
180
46
30
17
187
105
150
40
28
20
140
79
A
A
W
A
A
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
BVCES
VCE(ON)
VGE(th)
VGE(th)/TJ
VGE = 0 V, IC = 100 μA
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 125 °C
VCE = VGE, IC = 1.0 mA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
Q2 - Q3 TRENCH IGBT 600 V
gfe VCE = 20 V, IC = 30 A
VGE VCE = 20 V, IC = 30 A
ICES
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
IGES VGE = ± 30 V, VCE = 0 V
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
BVCES
VCE(ON)
VGE(th)
VGE(th)/TJ
VGE = 0 V, IC = 150 μA
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 125 °C
VCE = VGE, IC = 1.4 mA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
D1 - D4 ANTIPARALLEL DIODE
gfe VCE = 20 V, IC = 30 A
VGE VCE = 20 V, IC = 30 A
ICES
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IGES VGE = ± 20 V, VCE = 0 V
Forward voltage drop
D2 - D3 ANTIPARALLEL DIODE
VFM
IF = 20 A
IF = 20 A, TJ = 125 °C
Forward voltage drop
VFM
IF = 20 A
IF = 20 A TJ = 125 °C
MIN. TYP. MAX. UNITS
1200
-
-
2.6
-
-
-
-
-
-
-
2.12
2.31
4.6
- 14
36
7.1
0.001
0.5
-
-
2.52
V
-
6.6
- mV/°C
-
-
0.23
-
± 200
S
V
mA
nA
600 -
-
- 1.42 1.87
- 1.56 -
3.6 5.6 7.1
V
- - 17 - mV/°C
- 24 -
S
- 10 -
V
- 0.0003 0.23
mA
- 0.028 -
- - ± 200 nA
- 2.42 3.18 V
- 2.32 -
- 1.54 1.8
- 1.86 -
V
Revision: 27-Jun-14
2 Document Number: 94684
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-ENQ030L120S
Description EMIPAK-1B PressFit Power Module
Maker Vishay
Total Page 14 Pages
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