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Vishay Intertechnology Electronic Components Datasheet

VS-70MT060WHTAPbF Datasheet

IGBT MTP

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VS-70MT060WHTAPbF pdf
www.vishay.com
VS-70MT060WHTAPbF
Vishay Semiconductors
“Half Bridge” IGBT MTP (Warp 2 Speed IGBT), 70 A
MTP
PRODUCT SUMMARY
VCES
VCE(on) typical at VGE = 15 V
IC at TC = 78 °C
Package
Circuit
600 V
2.1 V
70 A
MTP
Half bridge
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• SMD thermistor (NTC)
• Al2O3 BDC
• Very low stay inductance design for high speed operation
• UL pending
• Speed 60 kHz to 150 kHz
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Lower coduction losses and switching losses
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
IF
IFM
VGE
VISOL
Maximum power dissipation, IGBT
PD
TEST CONDITIONS
TC = 25 °C
TC = 78 °C
TC = 78 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
600
100
70
300
300
53
200
± 20
2500
347
139
UNITS
V
A
V
W
Revision: 30-Oct-13
1 Document Number: 94469
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-70MT060WHTAPbF Datasheet

IGBT MTP

No Preview Available !

VS-70MT060WHTAPbF pdf
www.vishay.com
VS-70MT060WHTAPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage V(BR)CES
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Collector to emitter leaking current
VGE(th)
ICES
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 70 A
VGE = 15 V, IC = 140 A
VGE = 15 V, IC = 70 A, TJ = 150 °C
IC = 0.5 mA
VGE = 0 V, IC = 600 V
VGE = 0 V, IC = 600 V, TJ = 150 °C
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
600
-
-
-
3
-
-
-
TYP.
-
2.1
2.8
2.7
-
-
-
-
MAX.
-
2.4
3.4
3
6
0.7
10
± 250
UNITS
V
V
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fail time
Turn-on delay time
Rise time
Turn-off delay time
Fail time
Input capacitance
Output capacitane
Reverse transfer capacitance
Reverse BIAS safe operating area
Qg
Qge
Qgc
Eon
Eoff
Ets
Eon
Eoff
Ets
tdon
tr
tdoff
tf
tdon
tr
tdoff
tf
Cies
Coes
Cres
RBSOA
IC = 70 A
VCC = 480 V
VGE = 15 V
Rg = 10 
IC = 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, TJ = 25 °C
Rg = 10 
IC = 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, TJ = 150 °C
Rg = 10 
IC = 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery
Rg = 10 
IC = 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, TJ = 150 °C
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
TJ = 150 °C, IC = 300 A
VCC = 400 V, VP = 600 V
Rg = 22 , VGE = + 15 V to 0 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
460
160
70
1.1
0.9
2
1.27
1.13
2.4
314
49
308
68
312
50
320
78
8000
790
110
MAX.
690
250
130
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
UNITS
nC
mJ
ns
pF
Revision: 30-Oct-13
2 Document Number: 94469
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-70MT060WHTAPbF
Description IGBT MTP
Maker Vishay
Total Page 9 Pages
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