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Vishay Intertechnology Electronic Components Datasheet

VS-50MT060WHTAPbF Datasheet

IGBT MTP

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VS-50MT060WHTAPbF pdf
www.vishay.com
VS-50MT060WHTAPbF
Vishay Semiconductors
"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A
MTP
PRODUCT SUMMARY
VCES
VCE(on) typical at VGE = 15 V
IC at TC = 25 °C
Package
Circuit
600 V
2.3 V
114 A
MTP
Half bridge
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• UL approved file E78996
• Speed 60 kHz to 100 kHz
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low stray inductance design for high speed operation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
IF
IFM
VGE
VISOL
Maximum power dissipation
PD
TEST CONDITIONS
TC = 25 °C
TC = 109 °C
TC = 109 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
600
114
50
350
350
34
200
± 20
2500
658
263
UNITS
V
A
V
W
Revision: 30-Oct-13
1 Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-50MT060WHTAPbF Datasheet

IGBT MTP

No Preview Available !

VS-50MT060WHTAPbF pdf
www.vishay.com
VS-50MT060WHTAPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 50 A
Collector to emitter voltage
VCE(on) VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 50 A, TJ = 150 °C
Gate threshold voltage
VGE(th) IC = 0.5 mA
Collector to emitter leaking current
Diode forward voltage drop
Gate to emitter leakage current
VGE = 0 V, IC = 600 A
ICES
VGE = 0 V, IC = 600 A, TJ = 150 °C
IF = 50 A, VGE = 0 V
VFM IF = 50 A, VGE = 0 V, TJ = 150 °C
IF = 100 A, VGE = 0 V, TJ = 25 °C
IGES
VGE = ± 20 V
MIN.
600
-
-
-
3
-
-
-
-
-
-
TYP.
-
2.3
2.5
1.72
-
-
-
1.58
1.49
1.9
-
MAX.
-
3.15
3.2
2.17
6
0.4
10
1.80
1.68
2.17
± 250
UNITS
V
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Qg
Qge
Qgc
Eon
Eoff
Ets
Eon
Eoff
Ets
Cies
Coes
Cres
IC = 52 A
VCC = 400 V
VGE = 15 V
Internal gate resistors (see electrical diagram)
IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, TJ = 25 °C
Internal gate resistors (see electrical diagram)
IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, TJ = 150 °C
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
-
-
-
-
-
-
-
-
-
-
-
-
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
Qrr
-
-
-
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr VCC = 200 V, IC = 50 A
Irr dI/dt = 200 A/μs
Qrr TJ = 125 °C
-
-
-
TYP.
331
44
133
0.26
1.2
1.46
0.73
1.66
2.39
7100
510
140
82
8.3
340
137
12.7
870
MAX.
385
52
176
-
-
-
-
-
-
-
-
-
97
10.6
514
153
14.8
1132
UNITS
nC
mJ
mJ
pF
ns
A
nC
ns
A
nC
Revision: 30-Oct-13
2 Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-50MT060WHTAPbF
Description IGBT MTP
Maker Vishay
Total Page 6 Pages
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