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Vishay Intertechnology Electronic Components Datasheet

VS-123NQ100PbF Datasheet

High Performance Schottky Rectifiers

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VS-123NQ100PbF pdf
www.vishay.com
VS-123NQ100PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 120 A
Lug terminal
anode
HALF-PAK (D-67)
Base
cathode
PRODUCT SUMMARY
IF(AV)
VR
Package
Circuit
120 A
100 V
HALF-PAK (D-67)
Single diode
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-123NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF 120 Apk, TJ = 125 °C
TJ Range
VALUES
120
100
12 800
0.73
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-123NQ100PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 133 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
Following any rated
IFSM load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
120
12 800
1800
15
1
UNITS
A
A
mJ
A
Revision: 01-Apr-14
1 Document Number: 94129
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-123NQ100PbF Datasheet

High Performance Schottky Rectifiers

No Preview Available !

VS-123NQ100PbF pdf
www.vishay.com
VS-123NQ100PbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width = 500 μs
IRM
CT
LS
dV/dt
TEST CONDITIONS
120 A
240 A
TJ = 25 °C
120 A
240 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated VR
VALUES
0.91
1.26
0.73
0.9
3
40
2650
7.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range TJ, TStg
Maximum thermal resistance, junction to case
RthJC
DC operation
See fig. 4
Typical thermal resistance, case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Terminal torque
Case style
minimum
maximum
minimum
maximum
Non-lubricated threads
VALUES
-55 to 175
UNITS
°C
0.38
°C/W
0.05
30 g
1.06 oz.
3 (26.5)
4 (35.4)
3.4 (30)
N m
(lbf in)
5 (44.2)
HALF-PAK module
1000
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
0 0.5 1.0 1.5 2.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100
TJ = 175 °C
TJ = 150 °C
10 TJ = 125 °C
1
0.1
0.01
0.001
0
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
20
40
60
80 100
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 01-Apr-14
2 Document Number: 94129
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-123NQ100PbF
Description High Performance Schottky Rectifiers
Maker Vishay
Total Page 6 Pages
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