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Vishay Intertechnology Electronic Components Datasheet

VS-100MT060WDF Datasheet

Primary MTP IGBT Power Module

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VS-100MT060WDF pdf
www.vishay.com
VS-100MT060WDF
Vishay Semiconductors
Primary MTP IGBT Power Module
MTP
PRODUCT SUMMARY
FRED Pt® AP DIODE, TJ = 150 °C
VRRM
600 V
IF(DC) at 80 °C
11 A
VF at 25 °C at 60 A
2.08 V
IGBT, TJ = 150 °C
VCES
600 V
VCE(ON) at 25 °C at 60 A
1.98 V
IC at 80°C
83 A
FRED Pt® CHOPPER DIODE, TJ = 150 °C
VR 600 V
IF(DC) at 80 °C
17 A
VF at 25 °C at 60 A
2.06 V
Package
MTP
Circuit
Dual Forward
FEATURES
• Buck PFC stage with warp 2 IGBT and FRED Pt®
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• Very low stray inductance design for high speed operation
• Speed 25 kHz to 50 kHz
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Lower conduction losses and switching losses
• Higher switching frequency up to 150 kHz
• Optimized for welding, UPS, and SMPS applications
• PCB solderable terminals
• Direct mounting to heatsink
ABSOLUTE MAXIMUM RATINGS
PARAMETER
FRED Pt
Antiparallel
Diode
Repetitive peak reverse voltage
Maximum continuous forward current
TJ = 150 °C maximum
Maximum power dissipation
Collector to emitter voltage
Gate to emitter voltage
IGBT
Maximum continuous collector current
at VGE = 15 V, TJ = 150 °C maximum
Clamped inductive load current
Maximum power dissipation
Repetitive peak reverse voltage
FRED Pt
Chopper Diode
Maximum continuous forward current
TJ = 150 °C maximum
Maximum power dissipation
Maximum operating junction temperature
Storage temperature range
Isolation voltage
SYMBOL
VRRM
IF(DC)
PD
VCES
VGE
IC
ILM
PD
VRRM
IF
PD
TJ
TStg
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TJ = 25 °C
IGES max. ± 250 ns
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
VRMS t = 1 s, TJ = 25 °C
MAX.
600
17
11
25
600
± 20
121
83
300
462
600
26
17
56
150
- 40 to + 150
3500
UNITS
V
A
W
V
V
A
W
V
A
W
°C
V
Revision: 04-Dec-13
1 Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-100MT060WDF Datasheet

Primary MTP IGBT Power Module

No Preview Available !

VS-100MT060WDF pdf
www.vishay.com
VS-100MT060WDF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
AP Diode
Blocking voltage
Forward voltage drop
Collector to emitter
breakdown voltage
Temperature coefficient of
breakdown voltage
BVRRM
VFM
BVCES
0.5 mA
IF = 60 A
IF = 60 A, TJ = 125 °C
VGE = 0 V, IC = 0.5 mA
VBR(CES)/TJ IC = 0.5 mA (25 °C to 125 °C)
IGBT
Collector to emitter voltage
VCE(ON)
VGE 15 V, IC = 60 A
VGE = 15 V, lC = 60 A, TJ = 125 °C
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
Collector to emitter
leakage current
Gate to emitter leakage
VGE = 0 V, VCE = 600 V
ICES
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IGES
VGE = ± 20 V
FRED Pt
Chopper
Diode
Forward voltage drop
Blocking voltage
Reverse leakage current
VFM
BVRM
IRM
IF = 60 A
IF = 60 A, TJ = 125 °C
0.5 mA
VRRM = 600 V
VRRM = 600 V, TJ = 125 °C
RECOVERY PARAMETER
AP Diode
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
Irr IF = 60 A
trr dI/dt = 200 A/μs
Qrr VR = 200 V
FRED Pt
Chopper
Diode
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
Irr IF = 60 A
trr dI/dt = 200 A/μs
Qrr VR = 200 V
Irr IF = 60 A
trr dI/dt = 200 A/μs
Qrr VR = 200 V, TJ = 125 °C
MIN.
600
-
-
600
-
-
-
2.9
-
-
-
-
-
600
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
2.08
2.05
MAX. UNITS
-V
2.43
V
2.3
- -V
0.6 - V/°C
1.93
2.36
-
-
-
-
2.06
1.83
-
-
-
2.29
2.80
6.0
100
2.0
± 100
2.53
2.26
-
75
0.5
V
V
μA
mA
nA
V
μA
mA
67 11
120 160
620 850
4.5 6.0
67 85
130 250
9.5 12.0
128 165
601 900
A
ns
nC
A
ns
nC
A
ns
nC
Revision: 04-Dec-13
2 Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-100MT060WDF
Description Primary MTP IGBT Power Module
Maker Vishay
Total Page 11 Pages
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