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Vishay Intertechnology Electronic Components Datasheet

V12W60C-M3 Datasheet

Dual Trench MOS Barrier Schottky Rectifier

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V12W60C-M3 pdf
www.vishay.com
V12W60C-M3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 3 A
TMBS®
TO-252 (D-PAK)
K
A
A
V12W60C
AK
A HEATSINK
FEATURES
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 6 A (TA = 125 °C)
TJ max.
Package
2x6A
60 V
90 A
0.47 V
150 °C
TO-252 (D-PAK)
Diode variation
Dual common cathode
MECHANICAL DATA
Case: TO-252 (D-PAK)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Operating junction and storage temperature range
TJ, TSTG
V12W60C
60
12
6
90
-40 to +150
UNIT
V
A
A
°C
Revision: 04-Dec-13
1 Document Number: 89972
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

V12W60C-M3 Datasheet

Dual Trench MOS Barrier Schottky Rectifier

No Preview Available !

V12W60C-M3 pdf
www.vishay.com
V12W60C-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 3 A
IF = 6 A
IF = 3 A
IF = 6 A
Reverse current per diode
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.47
0.52
0.38
0.47
-
9
MAX.
-
0.62
-
0.58
3500
27
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V12W60C
Typical thermal resistance
per diode
per device
RJC
2.8
1.4
per device
RJA (1) (2)
65
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(2) Free air, without heatsink
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V12W60C-M3/I
0.38
PACKAGE CODE
I
BASE QUANTITY
2500/reel
DELIVERY MODE
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
14
12 RthJA=RthJC=1.4oC/W
10
8
6
TA , RthJA=65oC/W
4
2
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
T
D = tp/T
tp
123456
Average Forward Current (A)
7
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 04-Dec-13
2 Document Number: 89972
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number V12W60C-M3
Description Dual Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 5 Pages
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