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Vishay Intertechnology Electronic Components Datasheet

V10150S Datasheet

High-Voltage Trench MOS Barrier Schottky Rectifier

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V10150S pdf
New Product
V10150S, VI10150S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
V10150S
PIN 1
3
2
1
PIN 2
PIN 3
CASE
VI10150S
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
150 V
IFSM
120 A
VF at IF = 10 A
0.69 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualifiedwww.DataSheet.co.kr
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
V10150S
VI10150S
150
10
120
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89246 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



Vishay Intertechnology Electronic Components Datasheet

V10150S Datasheet

High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

V10150S pdf
V10150S, VI10150S
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current
VR = 100 V
VR = 150 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.79
1.05
0.59
0.69
1.3
1.2
-
3
MAX.
-
1.20
-
0.75
-
-
150
15
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10150S
VI10150S
Typical thermal resistance
RθJC
2.0
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g) PACKAGE CODE
TO-220AB
TO-262AA
TO-220AB
TO-262AA
V10150S-M3/4W
VI10150SG-M3/4W
V10150SHM3/4W (1)
VI10150SGHM3/4W (1)
1.88
1.45
1.88
1.45
www.DataSheet.co.kr
4W
4W
4W
4W
Note
(1) AEC-Q101 qualified
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89246
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



Vishay Intertechnology Electronic Components Datasheet

V10150S Datasheet

High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

V10150S pdf
New Product
V10150S, VI10150S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
10 TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
D = 0.8
D = 0.5
8 D = 0.3
D = 0.2
6
D = 0.1
4
D = 1.0
T
2
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
10
www.DataSheet.co.kr
Junction to Case
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
Document Number: 89246 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




Part Number V10150S
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 5 Pages
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