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Vishay Intertechnology Electronic Components Datasheet

T85HFL Datasheet

Fast Recovery Diodes

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T85HFL pdf
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A
D-55
PRODUCT SUMMARY
IF(AV)
Type
40 A/70 A/85 A
Modules - Diode, Fast
FEATURES
• Fast recovery time characteristics
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• UL E78996 approved
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The series of T-modules uses fast recovery power diodes in
a single diode configuration. The semiconductors are
electrically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction with
the thyristor modules as a freewheel diode. Application
includes self-commutated inverters, DC choppers, motor
control, inductive heating and electronic welders. These
modules are intended for those applications where very fast
recovery characteristics are required and for general power
switching applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
T40HFL
IF(AV)
IF(RMS)
40
63
IFSM
50 Hz
60 Hz
475
500
50 Hz
I2t
60 Hz
1130
1030
VRRM
Range
trr Range
TJ Range
T70HFL
70
110
830
870
3460
3160
100 to 1000
200 to 1000
- 40 to 125
T85HFL
85
133
1300
1370
8550
7810
UNITS
A
A
A
A2s
V
ns
°C
Document Number: 93184 For technical questions within your region, please contact one of the following:
Revision: 19-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

T85HFL Datasheet

Fast Recovery Diodes

No Preview Available !

T85HFL pdf
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
trr
CODE
T40HFL..
T70HFL..
T85HFL..
10 S02, S05, S10
20 S02, S05, S10
40 S02, S05, S10
60 S02, S05, S10
80 S05, S10
100 S05, S10
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
150
300
500
700
900
1100
IRRM MAXIMUM
AT TJ = 25 °C
μA
100
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
T40HFL T70HFL T85HFL UNITS
Maximum average
forward current
at case temperature
Maximum RMS
forward current
IF(AV)
180° conduction, half sine wave
IF(RMS)
40 70 85 A
70 °C
63 110 133 A
Maximum peak, one-cycle
forward, non-repetitive
surge current
Maximum I2t for fusing
t = 10 ms No voltage
475 830 1300
t = 8.3 ms reapplied
500 870 1370
IFSM
t = 10 ms 100 % VRRM
A
400 700 1100
t = 8.3 ms reapplied
Sinusoidal half wave,
420
730 1150
t = 10 ms No voltage initial TJ = TJ maximum 1130
3460
8550
t = 8.3 ms reapplied
I2t
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
1030
800
730
3160
2450
2230
7810
6050
5520
A2s
Maximum I2t for fusing
I2t t = 0.1 ms to 10 ms, no voltage reapplied
11 300 34 600 85 500 A2s
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward
voltage drop
VF(TO)1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV))
VF(TO)2 TJ = 25 °C, (I > π x IF(AV))
rf1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV))
rf2 TJ = 25 °C, (I > π x IF(AV))
VFM
IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square wave
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
0.82
0.84
7.0
6.8
1.60
0.87
0.90
2.77
2.67
1.73
0.84
0.86
2.15
2.07
1.55
V
mΩ
V
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93184
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-May-10


Part Number T85HFL
Description Fast Recovery Diodes
Maker Vishay
Total Page 16 Pages
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