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Vishay Intertechnology Electronic Components Datasheet

T110HF Datasheet

Power Rectifier Diodes

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T110HF pdf
T40HF..., T70HF..., T85HF..., T110HF... Series
Vishay Semiconductors
Power Rectifier Diodes (T-Modules), 40 A to 110 A
D-55
PRODUCT SUMMARY
IF(AV)
40 A to 110 A
Type
Modules - Diode, High Voltage
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
T40HF
IF(AV)
IF(RMS)
IFSM
TC
50 Hz
60 Hz
40
85
63
570
600
50 Hz
I2t
60 Hz
1630
1500
I2t 16 300
VRRM
TJ
FEATURES
• Electrically isolated base plate
• Types up to 1200 VRRM
• 3500 VRMS isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
T70HF
T85HF
70 85
85 85
110 134
1200
1700
1250
1800
7100
14 500
6450
13 500
70 700
148 700
100 to 1200
- 40 to 150
T110HF
110
85
173
2000
2100
20 500
18 600
204 300
UNITS
A
°C
A
A
A2s
A2s
V
°C
Document Number: 93587 For technical questions within your region, please contact one of the following:
Revision: 20-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1



Vishay Intertechnology Electronic Components Datasheet

T110HF Datasheet

Power Rectifier Diodes

No Preview Available !

T110HF pdf
T40HF..., T70HF..., T85HF..., T110HF... Series
Vishay Semiconductors
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
T40HF...
T70HF...
T85HF...
T110HF...
10
20
40
60
80
100
120
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
150
300
500
700
900
1100
1300
IRRM MAXIMUM
AT TJ = 25 °C
μA
100
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
T40HF T70HF T85HF T110HF UNITS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
40 70 85 110 A
85 85
85
85
°C
Maximum RMS forward current
Maximum peak, one-cycle
forward, non-repetitive
surge current
Maximum I2t for fusing
IF(RMS)
IFSM
I2t
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
63
570
600
480
500
1630
1500
1150
1050
110
1200
1250
1000
1050
7100
6450
5000
4570
134 173
1700 2000
1800 2100
1450 1700
1500 1780
14 500 20 500
13 500 18 600
10 500 14 500
9600 13 200
A
A
A2s
Maximum I2t for fusing
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of
forward slope resistance
High level value of
forward slope resistance
Maximum forward voltage drop
I2t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ maximum
(I > π x IF(AV)), TJ maximum
16 300 70 700 148 700 204 300 A2s
0.66 0.76 0.68
0.84 0.95 0.90
0.68
0.86
V
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ maximum
(I > π x IF(AV)), TJ maximum
4.3 2.4 1.76 1.56
mΩ
3.1 1.7 1.08 1.12
IFM = π x IF(AV), TJ = 25 °C,
tp = 400 μs square pulse
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.30
1.35
1.27
1.35
V
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 93587
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-May-10



Vishay Intertechnology Electronic Components Datasheet

T110HF Datasheet

Power Rectifier Diodes

No Preview Available !

T110HF pdf
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
RMS isolation voltage
T40HF..., T70HF..., T85HF..., T110HF... Series
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
Vishay Semiconductors
SYMBOL
TEST CONDITIONS
IRRM
VISOL
TJ = 150 °C
50 Hz, circuit to base, all terminals shorted
TJ = 25 °C, t = 1 s
T40HF T70HF T85HF T110HF UNITS
15 15 20
20 mA
3500 3500 3500 3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
T40HF T70HF T85HF T110HF
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthCS
DC operation
Mounting surface smooth, flat
and greased
- 40 to 150
°C
1.36 0.69 0.62 0.47
K/W
0.2
Mounting torque,
± 10 %
to heatsink
terminals
Non-lubricated
threads
M3.5 mounting screws (1)
M5 screw terminals
1.3 ± 10 %
3 ± 10 %
Nm
Approximate weight
See dimensions - link at the end of datasheet
54
g
Case style
T-module (D-55)
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
ΔR CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
180°
120°
90°
60°
30°
RECTANGULAR CONDUCTION AT TJ MAXIMUM
180°
120°
90°
60°
30°
T40HF...
0.12
0.14
0.18 0.27
0.46
0.09
0.15
0.20
0.28
0.46
T70HF...
0.09
0.11
0.14 0.20
0.35
0.07
0.11
0.15
0.21
0.35
T85HF...
0.08
0.09
0.12 0.18
0.31
0.06
0.10
0.13
0.19
0.31
T110HF...
0.05
0.07
0.09 0.14
0.23
0.05
0.08
0.10
0.15
0.24
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Document Number: 93587 For technical questions within your region, please contact one of the following:
Revision: 20-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3




Part Number T110HF
Description Power Rectifier Diodes
Maker Vishay
Total Page 12 Pages
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