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Vishay Intertechnology Electronic Components Datasheet

S594TXRW Datasheet

MOSMIC

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S594TXRW pdf
S594TX/S594TXR/S594TXRW
Vishay Semiconductors
MOSMIC® for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
C block
AGC
G2
RF in
G1
C block
RFC
D
S C block
VDD(VDS)
RF out
94 9296
Features
D Integrated gate protection diodes
D Low noise figure
D High gain, medium forward transadmittance
(24 mS typ.)
D Biasing network on chip
D Improved cross modulation at gain reduction
D High AGC-range with less steep slope
D SMD package
21
12
34
13628
S594TX Marking: X94
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
12
43
13629
S594TXR Marking: X4R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
43
13633
S594TXRW Marking: WX4
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85082
Rev. 1, 05-Jun-01
www.vishay.com
1 (5)



Vishay Intertechnology Electronic Components Datasheet

S594TXRW Datasheet

MOSMIC

No Preview Available !

S594TXRW pdf
S594TX/S594TXR/S594TXRW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VDS
ID
±IG1/G2SM
±VG1/G2SM
Ptot
TCh
Tstg
Value
8
25
10
6
200
150
–55 to +150
Unit
V
mA
mA
V
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
mChannel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35 m Cu
Symbol
RthChA
Value
450
Unit
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
+VG1S = 5 V, VG2S = VDS = 0
–VG1S = 5 V, VG2S = VDS = 0
±VG2S = 5 V, VG1S = VDS = 0
Drain current
Self-biased
operating current
Gate 2 - source
cut-off voltage
VDS = 5 V, VG1S = 0, VG2S = 4 V
VDS = 5 V, VG1S = nc, VG2S = 4 V
mVDS = 5 V, VG1S = nc, ID = 20 A
Symbol Min Typ Max Unit
±V(BR)G1SS 7
10 V
±V(BR)G2SS 7
+IG1SS
–IG1SS
±IG2SS
IDSS
IDSP
50
8
10 V
50 mA
100 mA
20 nA
250 mA
13 18 mA
VG2S(OFF) 0.8 1.0 1.4 V
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with VG1S < 0.7 V is feasible.
WUsing open collector switching transistor (inside of PLL), insert 10 k collector resistor.
www.vishay.com
2 (5)
Document Number 85082
Rev. 1, 05-Jun-01



Vishay Intertechnology Electronic Components Datasheet

S594TXRW Datasheet

MOSMIC

No Preview Available !

S594TXRW pdf
S594TX/S594TXR/S594TXRW
Vishay Semiconductors
Electrical AC Characteristics
VDS = 5 V, VG2S = 4 V, ID = IDSP , f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
Cross modulation
Test Conditions
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
Input level for k = 1 % @ 0 dB AGC
fw = 50 MHz, funw = 60 MHz
Input level for k = 1 % @ 40 dB AGC
fw = 50 MHz, funw = 60 MHz
Symbol Min Typ Max Unit
y21s
Cissg1
Crss
Coss
Gps
Gps
DGps
F
20
17
42
24 28
1.6 2.0
15 30
0.9
26
21
50
1
mS
pF
fF
pF
dB
dB
dB
dB
F
Xmod
1.3
90
dB
dBmV
Xmod 100 105
dBmV
Dimensions of S594TX in mm
Document Number 85082
Rev. 1, 05-Jun-01
96 12240
www.vishay.com
3 (5)




Part Number S594TXRW
Description MOSMIC
Maker Vishay
Total Page 5 Pages
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