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Vishay Intertechnology Electronic Components Datasheet

S330D Datasheet

Standard Avalanche Sintergalss Diode

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S330D pdf
VISHAY
Standard Avalanche Sinterglass Diode
S330D
Vishay Semiconductors
Features
• Controlled avalanche characteristics
• Glass passivated junction
• Low reverse current
• Hermetically sealed package
Applications
High voltage
Power supplies
949539
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Part
S330D
Type differentiation
VR = 1000 V; IFAV = 2 A
SOD-57
Package
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
Peak forward surge current
tp = 10 ms, half-sinewave
Average forward current
Tamb = 50 °C, l = 10 mm
Max. pulse energy in avalanche I(BR)R = 1 A, inductive load
mode, non repetitive (inductive
load switch off)
Junction and storage
temperature range
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
Lead length l = 10 mm,
TL = constant
Symbol
VR = VRRM
IFSM
IFAV
ER
Tj = Tstg
Value
1000
50
2.0
20
- 55 to + 175
Unit
V
A
A
mJ
°C
Symbol
RthJA
Value
45
Unit
K/W
Document Number 86053
Rev. 1.5, 11-Aug-04
www.vishay.com
1



Vishay Intertechnology Electronic Components Datasheet

S330D Datasheet

Standard Avalanche Sintergalss Diode

No Preview Available !

S330D pdf
S330D
Vishay Semiconductors
VISHAY
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 1 A
IF = 10 A
Reverse current
VR = VRRM
VR = VRRM, Tj = 100 °C
Reverse breakdown voltage
IR = 100 µA
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
Symbol
VF
VF
IR
IR
V(BR)R
trr
Min Typ. Max Unit
1V
1.65 V
5 µA
50 µA
1300
V
4 µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
10000
100
1000
80
60
ll
40
20
0
0
94 9090
TL=constant
5 10 15 20 25 30
l – Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
100
10
17213
1
25
50
75 100 125 150 175
TJ (°C)
Figure 3. Reverse Current vs. Junction Temperature
3.0
2.5
2.0 RthJA=45K/W
l=10mm
1.5
1.0
0.5
0.0
0
17212
20 40 60 80 100 120 140 160 180
Tamb – Ambient Temperature(°C )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
40
35
30
25
20
15
10
5
0
0.1
17214
1 10
VR (V)
100
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2
Document Number 86053
Rev. 1.5, 11-Aug-04



Vishay Intertechnology Electronic Components Datasheet

S330D Datasheet

Standard Avalanche Sintergalss Diode

No Preview Available !

S330D pdf
VISHAY
S330D
Vishay Semiconductors
100
10
TJT=175 °C
1
0.1
TJ=25 °C
0.01
0.001
0.0
17215
0.5
1.0
1.5 2.0 2.5 3.0 3.5 4.0
VF (V)
Figure 5. Typ. Forward Current vs. Forward Voltage
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
Cathode Identification
0.5
0.45
0.4
0.35
0.3
PR–Limit
@100%VR
0.25
0.2
0.15
0.1
0.05
PR–Limit
@80%VR
025 50 75 100 125 150 175
17216
Tj ( °C )
Figure 6. Max. Reverse Power Dissipation vs. Junction
Temperature
3.6 (0.140)max.
ISO Method E
94 9538
0.82 (0.032) max.
26(1.014) min.
4.0 (0.156) max.
26(1.014) min.
Document Number 86053
Rev. 1.5, 11-Aug-04
www.vishay.com
3




Part Number S330D
Description Standard Avalanche Sintergalss Diode
Maker Vishay
Total Page 4 Pages
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