http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Vishay Intertechnology Electronic Components Datasheet

CPV364M4UPbF Datasheet

IGBT SIP Module

No Preview Available !

CPV364M4UPbF pdf
www.vishay.com
CPV364M4UPbF
Vishay Semiconductors
IGBT SIP Module
(Ultrafast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
IRMS per phase (3.5 kW total)
with TC = 90 °C
TJ
Supply voltage
Power factor
Modulation depth (see fig. 1)
VCE(on) (typical)
at IC = 10 A, 25 °C
Package
Circuit
12 ARMS
125 °C
360 VDC
0.8
115 %
1.56 V
SIP
Three Phase Inverter
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
RoHS
COMPLIANT
• Optimized for high speed over 5 kHz
See fig. 1 for current vs. frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
VCES
Continuous collector current, each IGBT
IC
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
ICM (1)
ILM (2)
IF
IFM
VGE
VISOL
Maximum power dissipation, each IGBT PD
Operating junction and storage
temperature range
Soldering temperature
TJ, TStg
TC = 25 °C
TC = 100 °C
TC = 100 °C
t = 1 min, any terminal to case
TC = 25 °C
TC = 100 °C
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
Notes
(1) Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19)
600
20
10
60
60
9.3
60
± 20
2500
63
25
- 40 to + 150
300
5 to 7
(0.55 to 0.8)
V
A
V
VRMS
W
°C
lbf in
(N m)
Revision: 11-Jun-13
1 Document Number: 94489
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

CPV364M4UPbF Datasheet

IGBT SIP Module

No Preview Available !

CPV364M4UPbF pdf
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
RthJC (IGBT)
RthJC (DIODE)
RthCS (MODULE)
Weight of module
CPV364M4UPbF
Vishay Semiconductors
TYP.
-
-
0.10
20
0.7
MAX.
2.0
3.0
-
-
-
UNITS
°C/W
g
oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Temperature coefficient of
breakdown voltage
V(BR)CES (1)
V(BR)CESTJ
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 1.0 mA
Collector to emitter saturation voltage
VCE(on)
IC = 10 A
IC = 20 A
IC = 10 A, TJ = 150 °C
VGE = 15 V
See fig. 2, 5
MIN.
600
-
-
-
-
Gate threshold voltage
Temperature coefficient of
threshold voltage
Forward transconductance
Zero gate voltage collector current
VGE(th)
VGE(th)/TJ
gfe (2)
ICES
Diode forward voltage drop
Gate to emitter leakage current
Notes
(1) Pulse width 80 μs, duty factor 0.1 %
(2) Pulse width 5.0 μs; single shot
VFM
IGES
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 250 μA
VCE = 100 V, IC = 10 A
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 15 A
IC = 15 A, TJ = 150 °C
See fig. 13
VGE = ± 20 V
3.0
-
11
-
-
-
-
-
TYP.
-
0.63
1.56
1.84
1.56
-
- 13
18
-
-
1.3
1.2
-
MAX. UNITS
-V
- V/°C
2.1
-
V
-
6.0
- mV/°C
-
250
3500
1.7
1.6
± 100
S
μA
V
nA
Revision: 11-Jun-13
2 Document Number: 94489
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number CPV364M4UPbF
Description IGBT SIP Module
Maker Vishay
Total Page 11 Pages
PDF Download
CPV364M4UPbF pdf
Download PDF File
CPV364M4UPbF pdf
View for Mobile






Related Datasheet

1 CPV364M4UPbF IGBT SIP Module Vishay
Vishay
CPV364M4UPbF pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components