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VG36256401A - CMOS Synchronous Dynamic RAM

General Description

The device is CMOS Synchronous Dynamic RAM organized as 16,777,216 - word x 4 -bit x 4 - bank, 8,388,608 - word x 8 - bit x 4 - bank, or 4,194,304 - word x 16 - bit x 4 - bank.

Key Features

  • Single 3.3V ( ± 0.3V) power supply.
  • High speed clock cycle time : 7.5ns/10ns.
  • Fully synchronous with all signals referenced to a positive clock edge.
  • Programmable CAS Iatency (2,3).
  • Programmable burst length (1,2,4,8,& Full page).
  • Programmable wrap sequence (Sequential/Interleave).
  • Automatic precharge and controlled precharge.
  • Auto refresh and self refresh modes.
  • Quad Internal banks controlled by A13 & A14 (Bank s.

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Datasheet Details

Part number VG36256401A
Manufacturer Vanguard International Semiconductor
File Size 944.86 KB
Description CMOS Synchronous Dynamic RAM
Datasheet download datasheet VG36256401A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VIS Description Preliminary VG36256401A VG36256801A VG36256161A CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 16,777,216 - word x 4 -bit x 4 - bank, 8,388,608 - word x 8 - bit x 4 - bank, or 4,194,304 - word x 16 - bit x 4 - bank. These various organizations provide wide choice for different applications. It is designed with the state-of-the-art technology to meet standard PC100 or high speed PC133 requirement. Four internal independent banks greatly increase the performance efficiency. It is packaged in JEDEC standard pinout and standard plastic 54-pin TSOP package. Features • Single 3.3V ( ± 0.3V) power supply • High speed clock cycle time : 7.