| Description | The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression. This device is manufactured using 0.25µm Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form. IN Vg Vd1 Vd2 OUT Main Featur... |
| Features |
0.25µm Power pHEMT Technology Frequency band: 8-12GHz Output power: 29dBm @ 3dBcomp Linear gain: 25dB High PAE: 39% @ 3dBcomp Noise Factor: 5dB typ. Quiescent bias point: Vd=8V, Id=0.19A Chip size: 2.37x1.82x0.07mm
Pout (dBm) & PAE(%) & Gain(dB)
44 PAE @ 3dB comp 42 40 38 36 34 32 Pout @ 3dB comp 30 28 26 Linear Gain 24 22 20
8.0 ...
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| Datasheet |
 CHA5115-99F Datasheet - 164.77KB |
