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UDN302 Unisonic Technologies Power MOSFET

Description The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 3.Drain Power MOSFET 2.Gate 1....
Features * RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UDN302L-AE3-R UDN302G-AE3-R Package SOT-23 Pin Assignment 123 SGD Packing Tape Reel...

Datasheet PDF File UDN302 Datasheet - 197.31KB

UDN302  






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