| Description | The UTC F30NM60 is a N-Channel enhancement mode silicon gate super junction power MOSFET with fast body diode and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications. FEATURES * RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A ... |
| Features |
* RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * High Switching Speed * 100% Avalanche Tested
SYMBOL (2) Drain (5) Drain Power MOSFET (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd ... |
| Datasheet |
 F30NM60 Datasheet - 278.97KB |
