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P0903BV Datasheet Preview

P0903BV Datasheet

N-Channel Enhancement Mode MOSFET

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P0903BV pdf
P0903BV
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.65mΩ @VGS = 10V
ID
13A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TA = 25 °C
TA = 100 °C
ID
IDM
IAS
13
8
50
32
Avalanche Energy
L =0.1mH
EAS
51
Power Dissipation
TA= 25 °C
TA =100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
2.5
1
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
50
25
UNITS
°C / W
REV 1.0
1 2014/10/23



UNIKC
UNIKC

P0903BV Datasheet Preview

P0903BV Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0903BV pdf
P0903BV
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TC = 125 °C
VDS = 10V, VGS = 10V
30
1
50
1.9 2.5
±100
1
10
V
nA
mA
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 13A
VDS = 5V, ID = 13A
DYNAMIC
14.2 14.5
9.3 9.65
40
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V,f = 1MHz
1190
285
170
1.56
pF
Ω
Total Gate Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
23
11
Gate-Source Charge2
Qgs(VGS=10V)
Qgs(VGS=4.5V)
VDS = 0.5V(BR)DSS, ID = 30A
5.2 nC
4.5
Gate-Drain Charge2
Qgd(VGS=10V)
Qgd(VGS=4.5V)
5.6
5
Turn-On Delay Time2
td(on)
10
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,RL = 1.5Ω,
ID @ 20A,VGS = 10V, RGEN = 6Ω
6
32
nS
Fall Time2
tf
7
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current
IS
2.5 A
Forward Voltage1
VSD IF = IS, VGS = 0V
1V
Reverse Recovery Time
trr IF = 20A, dlF/dt = 100A / mS
15 nS
Reverse Recovery Charge
Qrr
32 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014/10/23


Part Number P0903BV
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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