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P0903BKB Datasheet Preview

P0903BKB Datasheet

N-Channel Enhancement Mode MOSFET

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P0903BKB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
49A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
49
31
120
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
12
9.8
Avalanche Current
IAS 29
Avalanche Energy
L = 0.1mH
EAS
42
TC = 25 °C
35
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
14
2.2
TA = 70 °C
1.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
Ver 1.0
1 2012/4/16




UNIKC
UNIKC

P0903BKB Datasheet Preview

P0903BKB Datasheet

N-Channel Enhancement Mode MOSFET

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P0903BKB pdf
P0903BKB
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RqJC
Junction-to-Ambient3
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,
in a still air environment with TA = 25°C.
3Package limitation current is 25A.
MAXIMUM
3.5
55
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1.0 1.5 3.0
±100
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
1
10
11 16
79
36
DYNAMIC
Input Capacitance
Ciss
825
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Coss VGS = 0V, VDS = 15V, f = 1MHz
Crss
Rg VGS = 0V, VDS = 0V, f = 1MHz
Qg(VGS = 10V)
Qg(VGS =
4.5V) Qgs
VDS = 0.5V(BR)DSS, VGS = 10V, ID = 20A
Qgd
td(on)
tr
td(off)
VDS = 15V,
ID @ 20A, VGS = 20V, RGEN = 6Ω
tf
171
135
1.5
20
11
3.2
6.3
20
12
36
11
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
Ver 1.0
2 2012/4/16




UNIKC
UNIKC

P0903BKB Datasheet Preview

P0903BKB Datasheet

N-Channel Enhancement Mode MOSFET

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P0903BKB pdf
P0903BKB
N-Channel Enhancement Mode MOSFET
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
17.2
6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 25A.
49
1.2
A
V
nS
nC
Ver 1.0
3 2012/4/16




Part Number P0903BKB
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 6 Pages
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