http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





UNIKC
UNIKC

P0903BK Datasheet Preview

P0903BK Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0903BK pdf
P0903BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
30A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
TC = 25 °C
(Package Limited)
TC = 25 °C(Silicon Limited)
ID
30
65
Pulsed Drain Current1
TC = 100 °C
41
IDM 150
Continuous Drain Current2
TA = 25 °C
TA = 70 °C
13
ID 10
Avalanche Current
IAS 35
Avalanche Energy
L = 0.1mH
EAS 60
Power Dissipation
TC = 25 °C
TC = 100 °C
62.5
PD 25
Power Dissipation
TA = 25 °C
TA = 70 °C
2.5
PD 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
Ver 1.0
1
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2
50
UNITS
°C / W
2012/4/12



UNIKC
UNIKC

P0903BK Datasheet Preview

P0903BK Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0903BK pdf
P0903BK
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 24V, VGS = 0V , TJ = 25 °C
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 30A
VDS = 15V, ID = 17A
30
1 1.65 3
±100
1
10
10 16
69
60
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
1140
299
178
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.49
Total Gate Charge2
Qg
22
Gate-Source Charge2
Qgs VDD = 15V, ID = 30A, VGS = 10V
4.5
Gate-Drain Charge2
Qgd
4
Turn-On Delay Time2
td(on)
18
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V, ID = 10A, RG= 6Ω
10
35
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
Reverse Recovery Time
VSD IF = 30A, VGS = 0V
trr IF = 30 A, dlF/dt = 100A /μS
30
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
30
1.2
5
UNIT
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
Ver 1.0
2 2012/4/12


Part Number P0903BK
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
PDF Download
P0903BK pdf
Download PDF File
P0903BK pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 P0903BD N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BD pdf
2 P0903BDA N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BDA pdf
3 P0903BDB N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BDB pdf
4 P0903BDG N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BDG pdf
5 P0903BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor Niko
Niko
P0903BDG pdf
6 P0903BDL N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BDL pdf
7 P0903BEA N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BEA pdf
8 P0903BI N-Channel Logic Level Enhancement Mode Field Effect Transistor Niko
Niko
P0903BI pdf
9 P0903BIS N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P0903BIS pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components