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UNIKC
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P0903BEA Datasheet Preview

P0903BEA Datasheet

N-Channel Enhancement Mode MOSFET

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P0903BEA pdf
P0903BEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
48A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
48
Continuous Drain Current2
TC = 100 °C
TA = 25 °C
ID
30
13
Pulsed Drain Current1
TA = 70 °C
IDM
10
130
Avalanche Current
IAS 30
Avalanche Energy
L = 0.1mH
EAS
45
TC = 25 °C
33
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
13
2.3
TA = 70 °C
1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
Ver 1.0
1 2012/9/4



UNIKC
UNIKC

P0903BEA Datasheet Preview

P0903BEA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0903BEA pdf
P0903BEA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
RqJA
55
Junction-to-Case
RqJC
3.7
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
3The value of R<JA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper , in a still air
environment with TA=25°CThe value in any given application depends on the user's specific board design
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.7 3
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
130
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 13A
VDS = 5V, ID = 13A
11.2 13
79
45
DYNAMIC
Input Capacitance
Ciss
1590
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
193
Reverse Transfer Capacitance
Crss
159
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg(VGS=10V)
Qg(VGS=4.5V
Q)gs
Qgd
VDS = 0.5V(BR)DSS, ID = 13A,
VGS=10V
31
17
5.5
8
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,
ID @ 13A, VGS = 10V, RGEN = 3Ω
1.7
9
14
32
16
UNIT
V
nA
mA
A
S
pF
nC
Ω
nS
Ver 1.0
2 2012/9/4


Part Number P0903BEA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 6 Pages
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