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P0903BDG Datasheet Preview

P0903BDG Datasheet

N-Channel Enhancement Mode MOSFET

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P0903BDG pdf
P0903BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5mΩ @VGS = 10V
ID
56A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
56
35
160
Avalanche Current
IAS 34
Avalanche Energy
L=0.1mH
EAS
60
Power Dissipation
TC= 25 °C
TC= 100°C
PD
49
20
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.55
63
UNITS
°C / W
REV 1.0 1 2014/5/7



UNIKC
UNIKC

P0903BDG Datasheet Preview

P0903BDG Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0903BDG pdf
P0903BDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS =20V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
25
1
1.6 3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =5V, ID =20A
VGS =10V, ID =25A
12 19
7 9.5
Forward Transconductance1
gfs
VDS =15V, ID =20A
60 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
1400
300
190
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS = 10V
VGS = 4.5V
Qgs
VDS =0.5V(BR)DSS,
ID = 25A
25
11
nC
6
Gate-Drain Charge2
Qgd
5
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
VDS = 15V ,RL=15Ω
ID1A, VGS = 10V, RGEN =6Ω
16
25
60
nS
Fall Time2
tf
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
37 A
Forward Voltage1
VSD IF =IS, VGS = 0V
1.3 V
Reverse Recovery Time
trr IF =25A, dlF/dt = 100A /mS
35 nS
Reverse Recovery Charge
Qrr
61 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0 2 2014/5/7


Part Number P0903BDG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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